Standard

InGaN nanostructures of a branched morphology on silicon substrate : MBE synthesis and properties. / Reznik, R. R.; Kotlyar, K. P.; Khrebtov, A. I.; Kryzhanovskaya, N. V.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1410, № 1, 012052, 20.12.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Reznik, RR, Kotlyar, KP, Khrebtov, AI, Kryzhanovskaya, NV & Cirlin, GE 2019, 'InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties', Journal of Physics: Conference Series, Том. 1410, № 1, 012052. https://doi.org/10.1088/1742-6596/1410/1/012052

APA

Reznik, R. R., Kotlyar, K. P., Khrebtov, A. I., Kryzhanovskaya, N. V., & Cirlin, G. E. (2019). InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties. Journal of Physics: Conference Series, 1410(1), [012052]. https://doi.org/10.1088/1742-6596/1410/1/012052

Vancouver

Reznik RR, Kotlyar KP, Khrebtov AI, Kryzhanovskaya NV, Cirlin GE. InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties. Journal of Physics: Conference Series. 2019 Дек. 20;1410(1). 012052. https://doi.org/10.1088/1742-6596/1410/1/012052

Author

Reznik, R. R. ; Kotlyar, K. P. ; Khrebtov, A. I. ; Kryzhanovskaya, N. V. ; Cirlin, G. E. / InGaN nanostructures of a branched morphology on silicon substrate : MBE synthesis and properties. в: Journal of Physics: Conference Series. 2019 ; Том 1410, № 1.

BibTeX

@article{bacc6c43a56b4f799dcfe4dfe0a9e65b,
title = "InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties",
abstract = "A possibility of InGaN nanostructures of a branched morphology MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Khrebtov, {A. I.} and Kryzhanovskaya, {N. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 ; Conference date: 22-04-2019 Through 25-04-2019",
year = "2019",
month = dec,
day = "20",
doi = "10.1088/1742-6596/1410/1/012052",
language = "English",
volume = "1410",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - InGaN nanostructures of a branched morphology on silicon substrate

T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Khrebtov, A. I.

AU - Kryzhanovskaya, N. V.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - A possibility of InGaN nanostructures of a branched morphology MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.

AB - A possibility of InGaN nanostructures of a branched morphology MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.

UR - http://www.scopus.com/inward/record.url?scp=85078147605&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1410/1/012052

DO - 10.1088/1742-6596/1410/1/012052

M3 - Conference article

AN - SCOPUS:85078147605

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012052

Y2 - 22 April 2019 through 25 April 2019

ER -

ID: 98505914