Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
DEEP LEVELS DUE TO DISLOCATIONS IN CdS. / Vyvenko, O. F.; Bazlov, N. V.; Tul'ev, A. V.
в: Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, Том 51, № 4, 1986, стр. 39-43.Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
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TY - JOUR
T1 - DEEP LEVELS DUE TO DISLOCATIONS IN CdS.
AU - Vyvenko, O. F.
AU - Bazlov, N. V.
AU - Tul'ev, A. V.
N1 - Copyright: Copyright 2004 Elsevier B.V., All rights reserved.
PY - 1986
Y1 - 1986
N2 - Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.
AB - Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.
UR - http://www.scopus.com/inward/record.url?scp=0022948514&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0022948514
VL - 51
SP - 39
EP - 43
JO - Bulletin of the Russian Academy of Sciences: Physics
JF - Bulletin of the Russian Academy of Sciences: Physics
SN - 1062-8738
IS - 4
T2 - Proc of the Fifth Int Conf on the Prop and Struct of Dislocat in Semicond
Y2 - 17 March 1986 through 22 March 1986
ER -
ID: 75077004