Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.
Язык оригинала | английский |
---|---|
Страницы (с-по) | 39-43 |
Число страниц | 5 |
Журнал | Bulletin of the Academy of Sciences of the U.S.S.R. Physical series |
Том | 51 |
Номер выпуска | 4 |
Состояние | Опубликовано - 1986 |
Событие | Proc of the Fifth Int Conf on the Prop and Struct of Dislocat in Semicond - Moscow, USSR Продолжительность: 17 мар 1986 → 22 мар 1986 |
ID: 75077004