Standard

DEEP LEVELS DUE TO DISLOCATIONS IN CdS. / Vyvenko, O. F.; Bazlov, N. V.; Tul'ev, A. V.

In: Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, Vol. 51, No. 4, 1986, p. 39-43.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Vyvenko, OF, Bazlov, NV & Tul'ev, AV 1986, 'DEEP LEVELS DUE TO DISLOCATIONS IN CdS.', Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, vol. 51, no. 4, pp. 39-43.

APA

Vyvenko, O. F., Bazlov, N. V., & Tul'ev, A. V. (1986). DEEP LEVELS DUE TO DISLOCATIONS IN CdS. Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 51(4), 39-43.

Vancouver

Vyvenko OF, Bazlov NV, Tul'ev AV. DEEP LEVELS DUE TO DISLOCATIONS IN CdS. Bulletin of the Academy of Sciences of the U.S.S.R. Physical series. 1986;51(4):39-43.

Author

Vyvenko, O. F. ; Bazlov, N. V. ; Tul'ev, A. V. / DEEP LEVELS DUE TO DISLOCATIONS IN CdS. In: Bulletin of the Academy of Sciences of the U.S.S.R. Physical series. 1986 ; Vol. 51, No. 4. pp. 39-43.

BibTeX

@article{f6592886cc3748ffafd13f412788da40,
title = "DEEP LEVELS DUE TO DISLOCATIONS IN CdS.",
abstract = "Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.",
author = "Vyvenko, {O. F.} and Bazlov, {N. V.} and Tul'ev, {A. V.}",
note = "Copyright: Copyright 2004 Elsevier B.V., All rights reserved.; Proc of the Fifth Int Conf on the Prop and Struct of Dislocat in Semicond ; Conference date: 17-03-1986 Through 22-03-1986",
year = "1986",
language = "English",
volume = "51",
pages = "39--43",
journal = "Bulletin of the Russian Academy of Sciences: Physics",
issn = "1062-8738",
publisher = "Allerton Press, Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - DEEP LEVELS DUE TO DISLOCATIONS IN CdS.

AU - Vyvenko, O. F.

AU - Bazlov, N. V.

AU - Tul'ev, A. V.

N1 - Copyright: Copyright 2004 Elsevier B.V., All rights reserved.

PY - 1986

Y1 - 1986

N2 - Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.

AB - Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.

UR - http://www.scopus.com/inward/record.url?scp=0022948514&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0022948514

VL - 51

SP - 39

EP - 43

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 4

T2 - Proc of the Fifth Int Conf on the Prop and Struct of Dislocat in Semicond

Y2 - 17 March 1986 through 22 March 1986

ER -

ID: 75077004