Nonstationary capacitance spectroscopy (DLTS) is widely used in determining deep-level parameters for semiconductors. In application to dislocations, an important point in that the method in particular enables one to isolate the lines corresponding to extended defects. Also, the working volume is determined by the thickness of the depleted region in a Schottky diode and the contact area, so it can be extremely small, and therefore microindentation can be used to introduce dislocations, while one can also examine unevenly distributed growth dislocations. We have applied DLTS to cadmium sulfide and have identified signals in the spectra corresponding to certain dislocation types.