Research output: Contribution to journal › Article › peer-review
It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
Original language | English |
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Pages (from-to) | 1619-1621 |
Number of pages | 3 |
Journal | Semiconductors |
Volume | 50 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2016 |
ID: 99723061