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Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator. / Bazlov, N. V.; Danishevskii, A. M.; Derbin, A. V.; Drachnev, I. S.; Kotina, I. M.; Konkov, O. I.; Kuzmichev, A. M.; Lasakov, M. S.; Trushin, M. V.; Unzhakov, E. V.

In: Journal of Physics: Conference Series, Vol. 1697, No. 1, 012181, 17.12.2020.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Bazlov, NV, Danishevskii, AM, Derbin, AV, Drachnev, IS, Kotina, IM, Konkov, OI, Kuzmichev, AM, Lasakov, MS, Trushin, MV & Unzhakov, EV 2020, 'Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator', Journal of Physics: Conference Series, vol. 1697, no. 1, 012181. https://doi.org/10.1088/1742-6596/1697/1/012181

APA

Bazlov, N. V., Danishevskii, A. M., Derbin, A. V., Drachnev, I. S., Kotina, I. M., Konkov, O. I., Kuzmichev, A. M., Lasakov, M. S., Trushin, M. V., & Unzhakov, E. V. (2020). Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator. Journal of Physics: Conference Series, 1697(1), [012181]. https://doi.org/10.1088/1742-6596/1697/1/012181

Vancouver

Bazlov NV, Danishevskii AM, Derbin AV, Drachnev IS, Kotina IM, Konkov OI et al. Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator. Journal of Physics: Conference Series. 2020 Dec 17;1697(1). 012181. https://doi.org/10.1088/1742-6596/1697/1/012181

Author

Bazlov, N. V. ; Danishevskii, A. M. ; Derbin, A. V. ; Drachnev, I. S. ; Kotina, I. M. ; Konkov, O. I. ; Kuzmichev, A. M. ; Lasakov, M. S. ; Trushin, M. V. ; Unzhakov, E. V. / Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator. In: Journal of Physics: Conference Series. 2020 ; Vol. 1697, No. 1.

BibTeX

@article{438aa15b8d564900a2b42620a4756b65,
title = "Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator",
abstract = "Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics. ",
author = "Bazlov, {N. V.} and Danishevskii, {A. M.} and Derbin, {A. V.} and Drachnev, {I. S.} and Kotina, {I. M.} and Konkov, {O. I.} and Kuzmichev, {A. M.} and Lasakov, {M. S.} and Trushin, {M. V.} and Unzhakov, {E. V.}",
note = "Funding Information: The reported study was funded by RFBR, project number 20-02-00571 Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; International Conference PhysicA.SPb 2020 ; Conference date: 19-10-2020 Through 23-10-2020",
year = "2020",
month = dec,
day = "17",
doi = "10.1088/1742-6596/1697/1/012181",
language = "English",
volume = "1697",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
url = "http://physica.spb.ru/, http://physica.spb.ru/archive/physicaspb2020/",

}

RIS

TY - JOUR

T1 - Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

AU - Bazlov, N. V.

AU - Danishevskii, A. M.

AU - Derbin, A. V.

AU - Drachnev, I. S.

AU - Kotina, I. M.

AU - Konkov, O. I.

AU - Kuzmichev, A. M.

AU - Lasakov, M. S.

AU - Trushin, M. V.

AU - Unzhakov, E. V.

N1 - Funding Information: The reported study was funded by RFBR, project number 20-02-00571 Publisher Copyright: © Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12/17

Y1 - 2020/12/17

N2 - Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.

AB - Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=85098329255&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1697/1/012181

DO - 10.1088/1742-6596/1697/1/012181

M3 - Conference article

AN - SCOPUS:85098329255

VL - 1697

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012181

T2 - International Conference PhysicA.SPb 2020

Y2 - 19 October 2020 through 23 October 2020

ER -

ID: 75066719