Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator. / Bazlov, N. V.; Danishevskii, A. M.; Derbin, A. V.; Drachnev, I. S.; Kotina, I. M.; Konkov, O. I.; Kuzmichev, A. M.; Lasakov, M. S.; Trushin, M. V.; Unzhakov, E. V.
в: Journal of Physics: Conference Series, Том 1697, № 1, 012181, 17.12.2020.Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
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TY - JOUR
T1 - Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator
AU - Bazlov, N. V.
AU - Danishevskii, A. M.
AU - Derbin, A. V.
AU - Drachnev, I. S.
AU - Kotina, I. M.
AU - Konkov, O. I.
AU - Kuzmichev, A. M.
AU - Lasakov, M. S.
AU - Trushin, M. V.
AU - Unzhakov, E. V.
N1 - Funding Information: The reported study was funded by RFBR, project number 20-02-00571 Publisher Copyright: © Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/12/17
Y1 - 2020/12/17
N2 - Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.
AB - Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=85098329255&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1697/1/012181
DO - 10.1088/1742-6596/1697/1/012181
M3 - Conference article
AN - SCOPUS:85098329255
VL - 1697
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012181
T2 - International Conference PhysicA.SPb 2020
Y2 - 19 October 2020 through 23 October 2020
ER -
ID: 75066719