Research output: Contribution to journal › Conference article › peer-review
Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.
Original language | English |
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Article number | 012181 |
Journal | Journal of Physics: Conference Series |
Volume | 1697 |
Issue number | 1 |
DOIs | |
State | Published - 17 Dec 2020 |
Event | International Conference PhysicA.SPb 2020 - ФТИ им. А.Ф. Иоффе, Санкт-Петербург, Russian Federation Duration: 19 Oct 2020 → 23 Oct 2020 http://physica.spb.ru/ http://physica.spb.ru/archive/physicaspb2020/ |
ID: 75066719