Research output: Contribution to journal › Conference article › peer-review
Multiply GaAs quantum dots in AlGaAs nanowires : MBE growth and properties. / Reznik, R. R.; Kotlyar, K. P.; Khrebtov, A. I.; Samsonenko, Yu B.; Shtrom, I. V.; Cirlin, G. E.
In: Journal of Physics: Conference Series, Vol. 1695, No. 1, 012205, 28.12.2020.Research output: Contribution to journal › Conference article › peer-review
}
TY - JOUR
T1 - Multiply GaAs quantum dots in AlGaAs nanowires
T2 - 7th International School and Conference "SaintPetersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures
AU - Reznik, R. R.
AU - Kotlyar, K. P.
AU - Khrebtov, A. I.
AU - Samsonenko, Yu B.
AU - Shtrom, I. V.
AU - Cirlin, G. E.
N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.
PY - 2020/12/28
Y1 - 2020/12/28
N2 - A possibility of the AlGaAs nanowires with multiply GaAs QDs MBE growth on silicon substrates has been demonstrated. The morphological on optical properties of grown structures were studied.
AB - A possibility of the AlGaAs nanowires with multiply GaAs QDs MBE growth on silicon substrates has been demonstrated. The morphological on optical properties of grown structures were studied.
UR - http://www.scopus.com/inward/record.url?scp=85098881784&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1695/1/012205
DO - 10.1088/1742-6596/1695/1/012205
M3 - Conference article
AN - SCOPUS:85098881784
VL - 1695
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012205
Y2 - 27 April 2020 through 30 April 2020
ER -
ID: 97045774