Standard

Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. / Vyvenko, O. F.; Bazlov, N. V.; Trushin, M. V.; Nadolinski, A. A.; Seibt, M.; Schröter, W.; Hahn, G.

Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. p. 279-284 (Solid State Phenomena; Vol. 108-109).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Vyvenko, OF, Bazlov, NV, Trushin, MV, Nadolinski, AA, Seibt, M, Schröter, W & Hahn, G 2005, Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. in Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Solid State Phenomena, vol. 108-109, Trans Tech Publications Ltd, pp. 279-284, 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, France, 25/09/05. https://doi.org/10.4028/3-908451-13-2.279

APA

Vyvenko, O. F., Bazlov, N. V., Trushin, M. V., Nadolinski, A. A., Seibt, M., Schröter, W., & Hahn, G. (2005). Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting (pp. 279-284). (Solid State Phenomena; Vol. 108-109). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-13-2.279

Vancouver

Vyvenko OF, Bazlov NV, Trushin MV, Nadolinski AA, Seibt M, Schröter W et al. Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd. 2005. p. 279-284. (Solid State Phenomena). https://doi.org/10.4028/3-908451-13-2.279

Author

Vyvenko, O. F. ; Bazlov, N. V. ; Trushin, M. V. ; Nadolinski, A. A. ; Seibt, M. ; Schröter, W. ; Hahn, G. / Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. pp. 279-284 (Solid State Phenomena).

BibTeX

@inproceedings{ac963c1bb6b045c38b591aefe4362a2b,
title = "Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon",
abstract = "Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as {"}band-like{"} or {"}localized{"}. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial {"}band-like{"} behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.",
keywords = "DLTS, Hydrogenation, Nickel suicide, Precipitates, Silicon",
author = "Vyvenko, {O. F.} and Bazlov, {N. V.} and Trushin, {M. V.} and Nadolinski, {A. A.} and M. Seibt and W. Schr{\"o}ter and G. Hahn",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 ; Conference date: 25-09-2005 Through 30-09-2005",
year = "2005",
doi = "10.4028/3-908451-13-2.279",
language = "English",
isbn = "3908451132",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "279--284",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting",
address = "Germany",

}

RIS

TY - GEN

T1 - Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon

AU - Vyvenko, O. F.

AU - Bazlov, N. V.

AU - Trushin, M. V.

AU - Nadolinski, A. A.

AU - Seibt, M.

AU - Schröter, W.

AU - Hahn, G.

N1 - Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2005

Y1 - 2005

N2 - Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as "band-like" or "localized". In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial "band-like" behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.

AB - Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as "band-like" or "localized". In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial "band-like" behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.

KW - DLTS

KW - Hydrogenation

KW - Nickel suicide

KW - Precipitates

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=85087579443&partnerID=8YFLogxK

U2 - 10.4028/3-908451-13-2.279

DO - 10.4028/3-908451-13-2.279

M3 - Conference contribution

AN - SCOPUS:85087579443

SN - 3908451132

SN - 9783908451136

T3 - Solid State Phenomena

SP - 279

EP - 284

BT - Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting

PB - Trans Tech Publications Ltd

T2 - 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005

Y2 - 25 September 2005 through 30 September 2005

ER -

ID: 75076676