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Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as "band-like" or "localized". In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial "band-like" behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.
Язык оригинала | английский |
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Название основной публикации | Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting |
Издатель | Trans Tech Publications Ltd |
Страницы | 279-284 |
Число страниц | 6 |
ISBN (печатное издание) | 3908451132, 9783908451136 |
DOI | |
Состояние | Опубликовано - 2005 |
Событие | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, Франция Продолжительность: 25 сен 2005 → 30 сен 2005 |
Название | Solid State Phenomena |
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Том | 108-109 |
ISSN (печатное издание) | 1012-0394 |
конференция | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 |
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Страна/Tерритория | Франция |
Город | Giens |
Период | 25/09/05 → 30/09/05 |
ID: 75076676