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Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication. / Lendyashova, V. V.; Kotlyar, K. P.; Reznik, R. R.; Berezovskaya, T. N.; Nikitina, E. V.; Soshnikov, I. P.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1695, № 1, 012047, 28.12.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Lendyashova, VV, Kotlyar, KP, Reznik, RR, Berezovskaya, TN, Nikitina, EV, Soshnikov, IP & Cirlin, GE 2020, 'Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication', Journal of Physics: Conference Series, Том. 1695, № 1, 012047. https://doi.org/10.1088/1742-6596/1695/1/012047

APA

Lendyashova, V. V., Kotlyar, K. P., Reznik, R. R., Berezovskaya, T. N., Nikitina, E. V., Soshnikov, I. P., & Cirlin, G. E. (2020). Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication. Journal of Physics: Conference Series, 1695(1), [012047]. https://doi.org/10.1088/1742-6596/1695/1/012047

Vancouver

Lendyashova VV, Kotlyar KP, Reznik RR, Berezovskaya TN, Nikitina EV, Soshnikov IP и пр. Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication. Journal of Physics: Conference Series. 2020 Дек. 28;1695(1). 012047. https://doi.org/10.1088/1742-6596/1695/1/012047

Author

Lendyashova, V. V. ; Kotlyar, K. P. ; Reznik, R. R. ; Berezovskaya, T. N. ; Nikitina, E. V. ; Soshnikov, I. P. ; Cirlin, G. E. / Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication. в: Journal of Physics: Conference Series. 2020 ; Том 1695, № 1.

BibTeX

@article{37e3485277f84c90a4a5451b9dea2b3c,
title = "Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication",
abstract = "In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction for nanowires with Ga-polar crystal structure. The diameter of the InGaN NWs decreases from 200-100 to 30-40 nm. After etching process, the intensity photoluminescence (PL) of nanowires and uniformity PL signal at all sample area increase.",
author = "Lendyashova, {V. V.} and Kotlyar, {K. P.} and Reznik, {R. R.} and Berezovskaya, {T. N.} and Nikitina, {E. V.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 7th International School and Conference {"}SaintPetersburg OPEN 2020{"} on Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 27-04-2020 Through 30-04-2020",
year = "2020",
month = dec,
day = "28",
doi = "10.1088/1742-6596/1695/1/012047",
language = "English",
volume = "1695",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication

AU - Lendyashova, V. V.

AU - Kotlyar, K. P.

AU - Reznik, R. R.

AU - Berezovskaya, T. N.

AU - Nikitina, E. V.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2020/12/28

Y1 - 2020/12/28

N2 - In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction for nanowires with Ga-polar crystal structure. The diameter of the InGaN NWs decreases from 200-100 to 30-40 nm. After etching process, the intensity photoluminescence (PL) of nanowires and uniformity PL signal at all sample area increase.

AB - In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction for nanowires with Ga-polar crystal structure. The diameter of the InGaN NWs decreases from 200-100 to 30-40 nm. After etching process, the intensity photoluminescence (PL) of nanowires and uniformity PL signal at all sample area increase.

UR - http://www.scopus.com/inward/record.url?scp=85098844198&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1695/1/012047

DO - 10.1088/1742-6596/1695/1/012047

M3 - Conference article

AN - SCOPUS:85098844198

VL - 1695

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012047

T2 - 7th International School and Conference "SaintPetersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 27 April 2020 through 30 April 2020

ER -

ID: 97045921