Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. / Soukhorukov, Andrey V.; Guseinov, Davud V.; Kudrin, Alexei V.; Popkov, Sergey A.; Detochenko, Alexandra P.; Koroleva, Alexandra V.; Ezhevskii, Alexander A.; Konakov, Anton A.; Abrosimov, Nikolai V.; Riemann, Helge.
Gettering and Defect Engineering in Semiconductor Technology XVI. ред. / Peter Pichler; Peter Pichler. Trans Tech Publications Ltd, 2016. стр. 327-331 (Solid State Phenomena; Том 242).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon
AU - Soukhorukov, Andrey V.
AU - Guseinov, Davud V.
AU - Kudrin, Alexei V.
AU - Popkov, Sergey A.
AU - Detochenko, Alexandra P.
AU - Koroleva, Alexandra V.
AU - Ezhevskii, Alexander A.
AU - Konakov, Anton A.
AU - Abrosimov, Nikolai V.
AU - Riemann, Helge
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.
AB - Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.
KW - Conduction electrons
KW - Electron paramagnetic resonance
KW - Magnetoresistance
KW - Spin relaxation
KW - Spin-dependent scattering
KW - Spin-orbit coupling
UR - http://www.scopus.com/inward/record.url?scp=84953888919&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.242.327
DO - 10.4028/www.scientific.net/SSP.242.327
M3 - Conference contribution
AN - SCOPUS:84953888919
SN - 9783038356080
T3 - Solid State Phenomena
SP - 327
EP - 331
BT - Gettering and Defect Engineering in Semiconductor Technology XVI
A2 - Pichler, Peter
A2 - Pichler, Peter
PB - Trans Tech Publications Ltd
T2 - 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
Y2 - 20 September 2015 through 25 September 2015
ER -
ID: 47708992