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The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. / Soukhorukov, Andrey V.; Guseinov, Davud V.; Kudrin, Alexei V.; Popkov, Sergey A.; Detochenko, Alexandra P.; Koroleva, Alexandra V.; Ezhevskii, Alexander A.; Konakov, Anton A.; Abrosimov, Nikolai V.; Riemann, Helge.

Gettering and Defect Engineering in Semiconductor Technology XVI. ed. / Peter Pichler; Peter Pichler. Trans Tech Publications Ltd, 2016. p. 327-331 (Solid State Phenomena; Vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Harvard

Soukhorukov, AV, Guseinov, DV, Kudrin, AV, Popkov, SA, Detochenko, AP, Koroleva, AV, Ezhevskii, AA, Konakov, AA, Abrosimov, NV & Riemann, H 2016, The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. in P Pichler & P Pichler (eds), Gettering and Defect Engineering in Semiconductor Technology XVI. Solid State Phenomena, vol. 242, Trans Tech Publications Ltd, pp. 327-331, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, Bad Staffelstein, Germany, 20/09/15. https://doi.org/10.4028/www.scientific.net/SSP.242.327

APA

Soukhorukov, A. V., Guseinov, D. V., Kudrin, A. V., Popkov, S. A., Detochenko, A. P., Koroleva, A. V., Ezhevskii, A. A., Konakov, A. A., Abrosimov, N. V., & Riemann, H. (2016). The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. In P. Pichler, & P. Pichler (Eds.), Gettering and Defect Engineering in Semiconductor Technology XVI (pp. 327-331). (Solid State Phenomena; Vol. 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.327

Vancouver

Soukhorukov AV, Guseinov DV, Kudrin AV, Popkov SA, Detochenko AP, Koroleva AV et al. The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. In Pichler P, Pichler P, editors, Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications Ltd. 2016. p. 327-331. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.242.327

Author

Soukhorukov, Andrey V. ; Guseinov, Davud V. ; Kudrin, Alexei V. ; Popkov, Sergey A. ; Detochenko, Alexandra P. ; Koroleva, Alexandra V. ; Ezhevskii, Alexander A. ; Konakov, Anton A. ; Abrosimov, Nikolai V. ; Riemann, Helge. / The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. Gettering and Defect Engineering in Semiconductor Technology XVI. editor / Peter Pichler ; Peter Pichler. Trans Tech Publications Ltd, 2016. pp. 327-331 (Solid State Phenomena).

BibTeX

@inproceedings{533e0363f50147d796b394d6e46c70fb,
title = "The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon",
abstract = "Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.",
keywords = "Conduction electrons, Electron paramagnetic resonance, Magnetoresistance, Spin relaxation, Spin-dependent scattering, Spin-orbit coupling",
author = "Soukhorukov, {Andrey V.} and Guseinov, {Davud V.} and Kudrin, {Alexei V.} and Popkov, {Sergey A.} and Detochenko, {Alexandra P.} and Koroleva, {Alexandra V.} and Ezhevskii, {Alexander A.} and Konakov, {Anton A.} and Abrosimov, {Nikolai V.} and Helge Riemann",
year = "2016",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/SSP.242.327",
language = "English",
isbn = "9783038356080",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "327--331",
editor = "Peter Pichler and Peter Pichler",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XVI",
address = "Germany",
note = "16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 ; Conference date: 20-09-2015 Through 25-09-2015",

}

RIS

TY - GEN

T1 - The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon

AU - Soukhorukov, Andrey V.

AU - Guseinov, Davud V.

AU - Kudrin, Alexei V.

AU - Popkov, Sergey A.

AU - Detochenko, Alexandra P.

AU - Koroleva, Alexandra V.

AU - Ezhevskii, Alexander A.

AU - Konakov, Anton A.

AU - Abrosimov, Nikolai V.

AU - Riemann, Helge

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

AB - Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

KW - Conduction electrons

KW - Electron paramagnetic resonance

KW - Magnetoresistance

KW - Spin relaxation

KW - Spin-dependent scattering

KW - Spin-orbit coupling

UR - http://www.scopus.com/inward/record.url?scp=84953888919&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.242.327

DO - 10.4028/www.scientific.net/SSP.242.327

M3 - Conference contribution

AN - SCOPUS:84953888919

SN - 9783038356080

T3 - Solid State Phenomena

SP - 327

EP - 331

BT - Gettering and Defect Engineering in Semiconductor Technology XVI

A2 - Pichler, Peter

A2 - Pichler, Peter

PB - Trans Tech Publications Ltd

T2 - 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015

Y2 - 20 September 2015 through 25 September 2015

ER -

ID: 47708992