The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide › Научные исследования в СПбГУ

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The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. / Никифоров, Константин Аркадьевич ; Трофимов, Василий Валерьевич ; Егоров, Николай Васильевич; Ильин, Владимир; Голубков, Владимир; Иванов, Алексей.

33rd International Vacuum Nanoelectronics Conference, IVNC 2020. 2020. 9203525 (33rd International Vacuum Nanoelectronics Conference, IVNC 2020).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Никифоров, КА , Трофимов, ВВ , Егоров, НВ, Ильин, В, Голубков, В & Иванов, А 2020, The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. в 33rd International Vacuum Nanoelectronics Conference, IVNC 2020., 9203525, 33rd International Vacuum Nanoelectronics Conference, IVNC 2020, 33rd International Vacuum Nanoelectronics Conference, IVNC , Лион, Франция, 5/07/20. https://doi.org/10.1109/IVNC49440.2020.9203525

APA

Никифоров, К. А., Трофимов, В. В., Егоров, Н. В., Ильин, В., Голубков, В., & Иванов, А. (2020). The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. в 33rd International Vacuum Nanoelectronics Conference, IVNC 2020 [9203525] (33rd International Vacuum Nanoelectronics Conference, IVNC 2020). https://doi.org/10.1109/IVNC49440.2020.9203525

Vancouver

Никифоров КА , Трофимов ВВ , Егоров НВ, Ильин В, Голубков В, Иванов А. The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. в 33rd International Vacuum Nanoelectronics Conference, IVNC 2020. 2020. 9203525. (33rd International Vacuum Nanoelectronics Conference, IVNC 2020). https://doi.org/10.1109/IVNC49440.2020.9203525

Author

Никифоров, Константин Аркадьевич ; Трофимов, Василий Валерьевич ; Егоров, Николай Васильевич ; Ильин, Владимир ; Голубков, Владимир ; Иванов, Алексей. / The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. 33rd International Vacuum Nanoelectronics Conference, IVNC 2020. 2020. (33rd International Vacuum Nanoelectronics Conference, IVNC 2020).

BibTeX

@inproceedings{2a7c1f48ae5642b29f1228562b623763,

title = "The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide",

abstract = "Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.",

keywords = "Electron emission, Field emission, Retarding potential, Silicon carbide, Silicon compounds, Spectroscopy, Wide bandgap semiconductors",

author = "Никифоров, {Константин Аркадьевич} and Трофимов, {Василий Валерьевич} and Егоров, {Николай Васильевич} and Владимир Ильин and Владимир Голубков and Алексей Иванов",

year = "2020",

month = jul,

doi = "10.1109/IVNC49440.2020.9203525",

language = "English",

isbn = "9781728194547",

series = "33rd International Vacuum Nanoelectronics Conference, IVNC 2020",

booktitle = "33rd International Vacuum Nanoelectronics Conference, IVNC 2020",

url = "https://www.vacuumnanoelectronics.org",

}

RIS

TY - GEN

T1 - The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide

AU - Никифоров, Константин Аркадьевич

AU - Трофимов, Василий Валерьевич

AU - Егоров, Николай Васильевич

AU - Ильин, Владимир

AU - Голубков, Владимир

AU - Иванов, Алексей

PY - 2020/7

Y1 - 2020/7

N2 - Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.

AB - Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.

KW - Electron emission

KW - Field emission

KW - Retarding potential

KW - Silicon carbide

KW - Silicon compounds

KW - Spectroscopy

KW - Wide bandgap semiconductors

UR - http://www.scopus.com/inward/record.url?scp=85092727555&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/5e7b43f6-6835-3844-901e-7049cbc81567/

U2 - 10.1109/IVNC49440.2020.9203525

DO - 10.1109/IVNC49440.2020.9203525

M3 - Conference contribution

SN - 9781728194547

T3 - 33rd International Vacuum Nanoelectronics Conference, IVNC 2020

BT - 33rd International Vacuum Nanoelectronics Conference, IVNC 2020

Y2 - 5 July 2020 through 9 July 2020

ER -

ID: 69857171