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The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. / Никифоров, Константин Аркадьевич; Трофимов, Василий Валерьевич; Егоров, Николай Васильевич; Ильин, Владимир; Голубков, Владимир; Иванов, Алексей.

33rd International Vacuum Nanoelectronics Conference, IVNC 2020. 2020. 9203525 (33rd International Vacuum Nanoelectronics Conference, IVNC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Никифоров, КА, Трофимов, ВВ, Егоров, НВ, Ильин, В, Голубков, В & Иванов, А 2020, The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. in 33rd International Vacuum Nanoelectronics Conference, IVNC 2020., 9203525, 33rd International Vacuum Nanoelectronics Conference, IVNC 2020, 33rd International Vacuum Nanoelectronics Conference, IVNC , Лион, France, 5/07/20. https://doi.org/10.1109/IVNC49440.2020.9203525

APA

Никифоров, К. А., Трофимов, В. В., Егоров, Н. В., Ильин, В., Голубков, В., & Иванов, А. (2020). The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. In 33rd International Vacuum Nanoelectronics Conference, IVNC 2020 [9203525] (33rd International Vacuum Nanoelectronics Conference, IVNC 2020). https://doi.org/10.1109/IVNC49440.2020.9203525

Vancouver

Никифоров КА, Трофимов ВВ, Егоров НВ, Ильин В, Голубков В, Иванов А. The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. In 33rd International Vacuum Nanoelectronics Conference, IVNC 2020. 2020. 9203525. (33rd International Vacuum Nanoelectronics Conference, IVNC 2020). https://doi.org/10.1109/IVNC49440.2020.9203525

Author

Никифоров, Константин Аркадьевич ; Трофимов, Василий Валерьевич ; Егоров, Николай Васильевич ; Ильин, Владимир ; Голубков, Владимир ; Иванов, Алексей. / The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide. 33rd International Vacuum Nanoelectronics Conference, IVNC 2020. 2020. (33rd International Vacuum Nanoelectronics Conference, IVNC 2020).

BibTeX

@inproceedings{2a7c1f48ae5642b29f1228562b623763,
title = "The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide",
abstract = "Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.",
keywords = "Electron emission, Field emission, Retarding potential, Silicon carbide, Silicon compounds, Spectroscopy, Wide bandgap semiconductors",
author = "Никифоров, {Константин Аркадьевич} and Трофимов, {Василий Валерьевич} and Егоров, {Николай Васильевич} and Владимир Ильин and Владимир Голубков and Алексей Иванов",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; null ; Conference date: 05-07-2020 Through 09-07-2020",
year = "2020",
month = jul,
doi = "10.1109/IVNC49440.2020.9203525",
language = "English",
isbn = "9781728194547",
series = "33rd International Vacuum Nanoelectronics Conference, IVNC 2020",
booktitle = "33rd International Vacuum Nanoelectronics Conference, IVNC 2020",
url = "https://www.vacuumnanoelectronics.org",

}

RIS

TY - GEN

T1 - The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide

AU - Никифоров, Константин Аркадьевич

AU - Трофимов, Василий Валерьевич

AU - Егоров, Николай Васильевич

AU - Ильин, Владимир

AU - Голубков, Владимир

AU - Иванов, Алексей

N1 - Publisher Copyright: © 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/7

Y1 - 2020/7

N2 - Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.

AB - Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.

KW - Electron emission

KW - Field emission

KW - Retarding potential

KW - Silicon carbide

KW - Silicon compounds

KW - Spectroscopy

KW - Wide bandgap semiconductors

UR - http://www.scopus.com/inward/record.url?scp=85092727555&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/5e7b43f6-6835-3844-901e-7049cbc81567/

U2 - 10.1109/IVNC49440.2020.9203525

DO - 10.1109/IVNC49440.2020.9203525

M3 - Conference contribution

SN - 9781728194547

T3 - 33rd International Vacuum Nanoelectronics Conference, IVNC 2020

BT - 33rd International Vacuum Nanoelectronics Conference, IVNC 2020

Y2 - 5 July 2020 through 9 July 2020

ER -

ID: 69857171