Standard

Si(Li) detector with ultra-thin entrance window on the diffusive lithium side. / Bazlov, N. V.; Derbin, A. V.; Drachnev, I. S.; Gicharevich, G. E.; Kotina, I. M.; Konkov, O. I.; Pilipenko, N. V.; Chmel, E. A.; Abolmasov, S. N.; Terukov, E. I.; Unzhakov, E. V.

в: Journal of Physics: Conference Series, Том 1400, № 5, 055056, 11.12.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Bazlov, NV, Derbin, AV, Drachnev, IS, Gicharevich, GE, Kotina, IM, Konkov, OI, Pilipenko, NV, Chmel, EA, Abolmasov, SN, Terukov, EI & Unzhakov, EV 2019, 'Si(Li) detector with ultra-thin entrance window on the diffusive lithium side', Journal of Physics: Conference Series, Том. 1400, № 5, 055056. https://doi.org/10.1088/1742-6596/1400/5/055056

APA

Bazlov, N. V., Derbin, A. V., Drachnev, I. S., Gicharevich, G. E., Kotina, I. M., Konkov, O. I., Pilipenko, N. V., Chmel, E. A., Abolmasov, S. N., Terukov, E. I., & Unzhakov, E. V. (2019). Si(Li) detector with ultra-thin entrance window on the diffusive lithium side. Journal of Physics: Conference Series, 1400(5), [055056]. https://doi.org/10.1088/1742-6596/1400/5/055056

Vancouver

Bazlov NV, Derbin AV, Drachnev IS, Gicharevich GE, Kotina IM, Konkov OI и пр. Si(Li) detector with ultra-thin entrance window on the diffusive lithium side. Journal of Physics: Conference Series. 2019 Дек. 11;1400(5). 055056. https://doi.org/10.1088/1742-6596/1400/5/055056

Author

Bazlov, N. V. ; Derbin, A. V. ; Drachnev, I. S. ; Gicharevich, G. E. ; Kotina, I. M. ; Konkov, O. I. ; Pilipenko, N. V. ; Chmel, E. A. ; Abolmasov, S. N. ; Terukov, E. I. ; Unzhakov, E. V. / Si(Li) detector with ultra-thin entrance window on the diffusive lithium side. в: Journal of Physics: Conference Series. 2019 ; Том 1400, № 5.

BibTeX

@article{cae81211d44c4ba190d40f65cd995357,
title = "Si(Li) detector with ultra-thin entrance window on the diffusive lithium side",
abstract = "Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3-4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n-or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 μm.",
author = "Bazlov, {N. V.} and Derbin, {A. V.} and Drachnev, {I. S.} and Gicharevich, {G. E.} and Kotina, {I. M.} and Konkov, {O. I.} and Pilipenko, {N. V.} and Chmel, {E. A.} and Abolmasov, {S. N.} and Terukov, {E. I.} and Unzhakov, {E. V.}",
note = "Funding Information: This work was supported by the Russian Fund for Basic Research grants # 19-02-00097, # 17-02-00305 and # 16-29-13014 and, partially, by Russian Science Foundation grant # 17-12-01009. Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; International Conference PhysicA.SPb 2019 ; Conference date: 22-10-2019 Through 24-10-2019",
year = "2019",
month = dec,
day = "11",
doi = "10.1088/1742-6596/1400/5/055056",
language = "English",
volume = "1400",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "5",

}

RIS

TY - JOUR

T1 - Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

AU - Bazlov, N. V.

AU - Derbin, A. V.

AU - Drachnev, I. S.

AU - Gicharevich, G. E.

AU - Kotina, I. M.

AU - Konkov, O. I.

AU - Pilipenko, N. V.

AU - Chmel, E. A.

AU - Abolmasov, S. N.

AU - Terukov, E. I.

AU - Unzhakov, E. V.

N1 - Funding Information: This work was supported by the Russian Fund for Basic Research grants # 19-02-00097, # 17-02-00305 and # 16-29-13014 and, partially, by Russian Science Foundation grant # 17-12-01009. Publisher Copyright: © Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2019/12/11

Y1 - 2019/12/11

N2 - Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3-4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n-or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 μm.

AB - Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3-4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n-or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 μm.

UR - http://www.scopus.com/inward/record.url?scp=85077542284&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1400/5/055056

DO - 10.1088/1742-6596/1400/5/055056

M3 - Conference article

AN - SCOPUS:85077542284

VL - 1400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 5

M1 - 055056

T2 - International Conference PhysicA.SPb 2019

Y2 - 22 October 2019 through 24 October 2019

ER -

ID: 75066856