DOI

  • N. V. Bazlov
  • A. V. Derbin
  • I. S. Drachnev
  • G. E. Gicharevich
  • I. M. Kotina
  • O. I. Konkov
  • N. V. Pilipenko
  • E. A. Chmel
  • S. N. Abolmasov
  • E. I. Terukov
  • E. V. Unzhakov

Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3-4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n-or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 μm.

Язык оригиналаанглийский
Номер статьи055056
ЖурналJournal of Physics: Conference Series
Том1400
Номер выпуска5
DOI
СостояниеОпубликовано - 11 дек 2019
СобытиеInternational Conference PhysicA.SPb 2019 - Saint Petersburg, Российская Федерация
Продолжительность: 22 окт 201924 окт 2019

    Предметные области Scopus

  • Физика и астрономия (все)

ID: 75066856