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Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. / Dubrovskii, V. G.; Xu, T.; Álvarez, A. Díaz; Plissard, S. R.; Caroff, P.; Glas, F.; Grandidier, B.

в: Nano Letters, Том 15, № 8, 12.08.2015, стр. 5580-5584.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dubrovskii, VG, Xu, T, Álvarez, AD, Plissard, SR, Caroff, P, Glas, F & Grandidier, B 2015, 'Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires', Nano Letters, Том. 15, № 8, стр. 5580-5584. https://doi.org/10.1021/acs.nanolett.5b02226, https://doi.org/10.1021/acs.nanolett.5b02226

APA

Dubrovskii, V. G., Xu, T., Álvarez, A. D., Plissard, S. R., Caroff, P., Glas, F., & Grandidier, B. (2015). Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. Nano Letters, 15(8), 5580-5584. https://doi.org/10.1021/acs.nanolett.5b02226, https://doi.org/10.1021/acs.nanolett.5b02226

Vancouver

Dubrovskii VG, Xu T, Álvarez AD, Plissard SR, Caroff P, Glas F и пр. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. Nano Letters. 2015 Авг. 12;15(8):5580-5584. https://doi.org/10.1021/acs.nanolett.5b02226, https://doi.org/10.1021/acs.nanolett.5b02226

Author

Dubrovskii, V. G. ; Xu, T. ; Álvarez, A. Díaz ; Plissard, S. R. ; Caroff, P. ; Glas, F. ; Grandidier, B. / Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. в: Nano Letters. 2015 ; Том 15, № 8. стр. 5580-5584.

BibTeX

@article{84264245122d47a8a4431b715d748cc4,
title = "Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires",
abstract = "Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.",
keywords = "focusing effect, growth kinetics, III-V nanowires, self-catalyzed growth, silicon integration, size distribution",
author = "Dubrovskii, {V. G.} and T. Xu and {\'A}lvarez, {A. D{\'i}az} and Plissard, {S. R.} and P. Caroff and F. Glas and B. Grandidier",
year = "2015",
month = aug,
day = "12",
doi = "10.1021/acs.nanolett.5b02226",
language = "English",
volume = "15",
pages = "5580--5584",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

AU - Dubrovskii, V. G.

AU - Xu, T.

AU - Álvarez, A. Díaz

AU - Plissard, S. R.

AU - Caroff, P.

AU - Glas, F.

AU - Grandidier, B.

PY - 2015/8/12

Y1 - 2015/8/12

N2 - Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.

AB - Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.

KW - focusing effect

KW - growth kinetics

KW - III-V nanowires

KW - self-catalyzed growth

KW - silicon integration

KW - size distribution

UR - http://www.scopus.com/inward/record.url?scp=84939244408&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b02226

DO - 10.1021/acs.nanolett.5b02226

M3 - Article

AN - SCOPUS:84939244408

VL - 15

SP - 5580

EP - 5584

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 8

ER -

ID: 107073070