Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

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Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates. / Gridchin, V. O.; Reznik, R. R.; Kotlyar, K. P.; Dragunova, A. S.; Dvoretckaia, L. N.; Parfeneva, A. V.; Shevchuk, D. S.; Kryzhanovskaya, N. V.; Mukhin, I. S.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1851, № 1, 012006, 15.04.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Author

Gridchin, V. O. ; Reznik, R. R. ; Kotlyar, K. P. ; Dragunova, A. S. ; Dvoretckaia, L. N. ; Parfeneva, A. V. ; Shevchuk, D. S. ; Kryzhanovskaya, N. V. ; Mukhin, I. S. ; Cirlin, G. E. / Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates. в: Journal of Physics: Conference Series. 2021 ; Том 1851, № 1.

BibTeX

@article{5c44379b7bd04c1e813294adfa52f3c3,

title = "Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates",

abstract = "We present the results of selective-area growth of GaN nanowires by molecular beam epitaxy on patterned SiOx/Si substrates without using seed layers. The morphological and optical properties of selectively grown GaN nanowires are compared to the properties of GaN nanowires grown on the amorphous SiOx layer. The experimental results show that the selectivity of GaN nanowires is achieved at a substrate temperature of 825 C which is the lower limit for the selective-area growth of GaN nanowires on SiOx/Si substrates. The study of the photoluminescence spectra of the grown nanowires, measured at 77 K show an emission line at 3.47 eV, which corresponds to strain-free GaN. ",

author = "Gridchin, {V. O.} and Reznik, {R. R.} and Kotlyar, {K. P.} and Dragunova, {A. S.} and Dvoretckaia, {L. N.} and Parfeneva, {A. V.} and Shevchuk, {D. S.} and Kryzhanovskaya, {N. V.} and Mukhin, {I. S.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020 ; Conference date: 23-11-2020 Through 27-11-2020",

year = "2021",

month = apr,

day = "15",

doi = "10.1088/1742-6596/1851/1/012006",

language = "English",

volume = "1851",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

AU - Gridchin, V. O.

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Dragunova, A. S.

AU - Dvoretckaia, L. N.

AU - Parfeneva, A. V.

AU - Shevchuk, D. S.

AU - Kryzhanovskaya, N. V.

AU - Mukhin, I. S.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2021/4/15

Y1 - 2021/4/15

N2 - We present the results of selective-area growth of GaN nanowires by molecular beam epitaxy on patterned SiOx/Si substrates without using seed layers. The morphological and optical properties of selectively grown GaN nanowires are compared to the properties of GaN nanowires grown on the amorphous SiOx layer. The experimental results show that the selectivity of GaN nanowires is achieved at a substrate temperature of 825 C which is the lower limit for the selective-area growth of GaN nanowires on SiOx/Si substrates. The study of the photoluminescence spectra of the grown nanowires, measured at 77 K show an emission line at 3.47 eV, which corresponds to strain-free GaN.

AB - We present the results of selective-area growth of GaN nanowires by molecular beam epitaxy on patterned SiOx/Si substrates without using seed layers. The morphological and optical properties of selectively grown GaN nanowires are compared to the properties of GaN nanowires grown on the amorphous SiOx layer. The experimental results show that the selectivity of GaN nanowires is achieved at a substrate temperature of 825 C which is the lower limit for the selective-area growth of GaN nanowires on SiOx/Si substrates. The study of the photoluminescence spectra of the grown nanowires, measured at 77 K show an emission line at 3.47 eV, which corresponds to strain-free GaN.

UR - http://www.scopus.com/inward/record.url?scp=85104595700&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1851/1/012006

DO - 10.1088/1742-6596/1851/1/012006

M3 - Conference article

AN - SCOPUS:85104595700

VL - 1851

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012006

T2 - 22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020

Y2 - 23 November 2020 through 27 November 2020

ER -

ID: 97045148