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Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs. / Spurgeon, Steven; Matthews, Bethany; Sushko, Peter; Linpeng, Xiayu; Viitaniemi, Maria; Durnev, Mikhail; Glazov, Mikhail; Wieck, Andreas; Ludwig, Arne; Fu, Kai Mei.

в: Microscopy and Microanalysis, Том 26, № Suppl 2, 2020.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Spurgeon, S, Matthews, B, Sushko, P, Linpeng, X, Viitaniemi, M, Durnev, M, Glazov, M, Wieck, A, Ludwig, A & Fu, KM 2020, 'Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs', Microscopy and Microanalysis, Том. 26, № Suppl 2. https://doi.org/10.1017/S1431927620022904

APA

Spurgeon, S., Matthews, B., Sushko, P., Linpeng, X., Viitaniemi, M., Durnev, M., Glazov, M., Wieck, A., Ludwig, A., & Fu, K. M. (2020). Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs. Microscopy and Microanalysis, 26(Suppl 2). https://doi.org/10.1017/S1431927620022904

Vancouver

Spurgeon S, Matthews B, Sushko P, Linpeng X, Viitaniemi M, Durnev M и пр. Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs. Microscopy and Microanalysis. 2020;26(Suppl 2). https://doi.org/10.1017/S1431927620022904

Author

Spurgeon, Steven ; Matthews, Bethany ; Sushko, Peter ; Linpeng, Xiayu ; Viitaniemi, Maria ; Durnev, Mikhail ; Glazov, Mikhail ; Wieck, Andreas ; Ludwig, Arne ; Fu, Kai Mei. / Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs. в: Microscopy and Microanalysis. 2020 ; Том 26, № Suppl 2.

BibTeX

@article{e253c9ec677e4a41a42e81f10971b4cd,
title = "Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs",
author = "Steven Spurgeon and Bethany Matthews and Peter Sushko and Xiayu Linpeng and Maria Viitaniemi and Mikhail Durnev and Mikhail Glazov and Andreas Wieck and Arne Ludwig and Fu, {Kai Mei}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
doi = "10.1017/S1431927620022904",
language = "English",
volume = "26",
journal = "Microscopy and Microanalysis",
issn = "1431-9276",
publisher = "Cambridge University Press",
number = "Suppl 2",

}

RIS

TY - JOUR

T1 - Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs

AU - Spurgeon, Steven

AU - Matthews, Bethany

AU - Sushko, Peter

AU - Linpeng, Xiayu

AU - Viitaniemi, Maria

AU - Durnev, Mikhail

AU - Glazov, Mikhail

AU - Wieck, Andreas

AU - Ludwig, Arne

AU - Fu, Kai Mei

N1 - Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020

Y1 - 2020

UR - http://www.scopus.com/inward/record.url?scp=85094102298&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/3eb04939-503a-3d1a-ac08-01d07fbd0f49/

U2 - 10.1017/S1431927620022904

DO - 10.1017/S1431927620022904

M3 - Article

AN - SCOPUS:85094102298

VL - 26

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - Suppl 2

ER -

ID: 70500602