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Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. / Verbin, S.Yu.; Novikov, B.V.; Juferev, R.B.; Stepanov, Yu.; Novikov, A.B.; Thach, Dihn Son; Shchur, I.; Talalaev, V.G.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Cirlin, G.E.; Dubrovskii, V.G.; Petrov, V.N.; Zhukov, A.E.; Egorov, A.Yu.; Ustinov, V.M.

Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. 1999. стр. 63-66.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборникенаучная

Harvard

Verbin, SY, Novikov, BV, Juferev, RB, Stepanov, Y, Novikov, AB, Thach, DS, Shchur, I, Talalaev, VG, Gobsch, G, Goldhahn, R, Stein, N, Golombek, A, Cirlin, GE, Dubrovskii, VG, Petrov, VN, Zhukov, AE, Egorov, AY & Ustinov, VM 1999, Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. в Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. стр. 63-66.

APA

Verbin, S. Y., Novikov, B. V., Juferev, R. B., Stepanov, Y., Novikov, A. B., Thach, D. S., Shchur, I., Talalaev, V. G., Gobsch, G., Goldhahn, R., Stein, N., Golombek, A., Cirlin, G. E., Dubrovskii, V. G., Petrov, V. N., Zhukov, A. E., Egorov, A. Y., & Ustinov, V. M. (1999). Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. в Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology (стр. 63-66)

Vancouver

Verbin SY, Novikov BV, Juferev RB, Stepanov Y, Novikov AB, Thach DS и пр. Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. в Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. 1999. стр. 63-66

Author

Verbin, S.Yu. ; Novikov, B.V. ; Juferev, R.B. ; Stepanov, Yu. ; Novikov, A.B. ; Thach, Dihn Son ; Shchur, I. ; Talalaev, V.G. ; Gobsch, G. ; Goldhahn, R. ; Stein, N. ; Golombek, A. ; Cirlin, G.E. ; Dubrovskii, V.G. ; Petrov, V.N. ; Zhukov, A.E. ; Egorov, A.Yu. ; Ustinov, V.M. / Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. 1999. стр. 63-66

BibTeX

@inbook{d1fefed4e8964ca6b1f7dd210c37fb22,
title = "Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces",
author = "S.Yu. Verbin and B.V. Novikov and R.B. Juferev and Yu. Stepanov and A.B. Novikov and Thach, {Dihn Son} and I. Shchur and V.G. Talalaev and G. Gobsch and R. Goldhahn and N. Stein and A. Golombek and G.E. Cirlin and V.G. Dubrovskii and V.N. Petrov and A.E. Zhukov and A.Yu. Egorov and V.M. Ustinov",
year = "1999",
language = "English",
pages = "63--66",
booktitle = "Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology",

}

RIS

TY - CHAP

T1 - Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces

AU - Verbin, S.Yu.

AU - Novikov, B.V.

AU - Juferev, R.B.

AU - Stepanov, Yu.

AU - Novikov, A.B.

AU - Thach, Dihn Son

AU - Shchur, I.

AU - Talalaev, V.G.

AU - Gobsch, G.

AU - Goldhahn, R.

AU - Stein, N.

AU - Golombek, A.

AU - Cirlin, G.E.

AU - Dubrovskii, V.G.

AU - Petrov, V.N.

AU - Zhukov, A.E.

AU - Egorov, A.Yu.

AU - Ustinov, V.M.

PY - 1999

Y1 - 1999

M3 - Article in an anthology

SP - 63

EP - 66

BT - Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology

ER -

ID: 4406931