Standard
Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. / Verbin, S.Yu.; Novikov, B.V.; Juferev, R.B.; Stepanov, Yu.; Novikov, A.B.; Thach, Dihn Son; Shchur, I.; Talalaev, V.G.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Cirlin, G.E.; Dubrovskii, V.G.; Petrov, V.N.; Zhukov, A.E.; Egorov, A.Yu.; Ustinov, V.M.
Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. 1999. p. 63-66.
Research output: Chapter in Book/Report/Conference proceeding › Article in an anthology
Harvard
Verbin, SY, Novikov, BV, Juferev, RB, Stepanov, Y, Novikov, AB, Thach, DS, Shchur, I, Talalaev, VG, Gobsch, G, Goldhahn, R, Stein, N, Golombek, A, Cirlin, GE
, Dubrovskii, VG, Petrov, VN, Zhukov, AE, Egorov, AY & Ustinov, VM 1999,
Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. in
Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. pp. 63-66.
APA
Verbin, S. Y., Novikov, B. V., Juferev, R. B., Stepanov, Y., Novikov, A. B., Thach, D. S., Shchur, I., Talalaev, V. G., Gobsch, G., Goldhahn, R., Stein, N., Golombek, A., Cirlin, G. E.
, Dubrovskii, V. G., Petrov, V. N., Zhukov, A. E., Egorov, A. Y., & Ustinov, V. M. (1999).
Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. In
Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology (pp. 63-66)
Vancouver
Author
Verbin, S.Yu. ; Novikov, B.V. ; Juferev, R.B. ; Stepanov, Yu. ; Novikov, A.B. ; Thach, Dihn Son ; Shchur, I. ; Talalaev, V.G. ; Gobsch, G. ; Goldhahn, R. ; Stein, N. ; Golombek, A. ; Cirlin, G.E.
; Dubrovskii, V.G. ; Petrov, V.N. ; Zhukov, A.E. ; Egorov, A.Yu. ; Ustinov, V.M. /
Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces. Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology. 1999. pp. 63-66
BibTeX
@inbook{d1fefed4e8964ca6b1f7dd210c37fb22,
title = "Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces",
author = "S.Yu. Verbin and B.V. Novikov and R.B. Juferev and Yu. Stepanov and A.B. Novikov and Thach, {Dihn Son} and I. Shchur and V.G. Talalaev and G. Gobsch and R. Goldhahn and N. Stein and A. Golombek and G.E. Cirlin and V.G. Dubrovskii and V.N. Petrov and A.E. Zhukov and A.Yu. Egorov and V.M. Ustinov",
year = "1999",
language = "English",
pages = "63--66",
booktitle = "Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology",
}
RIS
TY - CHAP
T1 - Photoluminescence study of electronic structure of InAs quantum dots grown on GaAs vicinal surfaces
AU - Verbin, S.Yu.
AU - Novikov, B.V.
AU - Juferev, R.B.
AU - Stepanov, Yu.
AU - Novikov, A.B.
AU - Thach, Dihn Son
AU - Shchur, I.
AU - Talalaev, V.G.
AU - Gobsch, G.
AU - Goldhahn, R.
AU - Stein, N.
AU - Golombek, A.
AU - Cirlin, G.E.
AU - Dubrovskii, V.G.
AU - Petrov, V.N.
AU - Zhukov, A.E.
AU - Egorov, A.Yu.
AU - Ustinov, V.M.
PY - 1999
Y1 - 1999
M3 - Article in an anthology
SP - 63
EP - 66
BT - Proceedings of Seventh International Symposium on Nano-structures: Physics and Technology
ER -
