Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Long catalyst-free InAs nanowires grown on silicon by HVPE. / Grégoire, Gabin; Gil, Evelyne; Zeghouane, Mohammed; Bougerol, Catherine; Hijazi, Hadi; Castelluci, Dominique; Dubrovskii, Vladimir G.; Trassoudaine, Agnès; Goktas, Nebile Isik; Lapierre, Ray R.; André, Yamina.
в: CrystEngComm, Том 23, № 2, 14.01.2021, стр. 378-384.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Long catalyst-free InAs nanowires grown on silicon by HVPE
AU - Grégoire, Gabin
AU - Gil, Evelyne
AU - Zeghouane, Mohammed
AU - Bougerol, Catherine
AU - Hijazi, Hadi
AU - Castelluci, Dominique
AU - Dubrovskii, Vladimir G.
AU - Trassoudaine, Agnès
AU - Goktas, Nebile Isik
AU - Lapierre, Ray R.
AU - André, Yamina
N1 - Publisher Copyright: © The Royal Society of Chemistry.
PY - 2021/1/14
Y1 - 2021/1/14
N2 - We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate grown at a standard rate of 50 μm h-1. The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As4/As2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon. This journal is
AB - We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate grown at a standard rate of 50 μm h-1. The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As4/As2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon. This journal is
KW - SURFACE-DIFFUSION
KW - EPITAXIAL-GROWTH
KW - V/III RATIO
KW - GAAS
KW - PHASE
KW - MECHANISM
KW - DIAMETER
KW - SI(111)
KW - LAYERS
UR - http://www.scopus.com/inward/record.url?scp=85099546747&partnerID=8YFLogxK
U2 - 10.1039/d0ce01385d
DO - 10.1039/d0ce01385d
M3 - Article
AN - SCOPUS:85099546747
VL - 23
SP - 378
EP - 384
JO - CrystEngComm
JF - CrystEngComm
SN - 1466-8033
IS - 2
ER -
ID: 88771647