Standard

Long catalyst-free InAs nanowires grown on silicon by HVPE. / Grégoire, Gabin; Gil, Evelyne; Zeghouane, Mohammed; Bougerol, Catherine; Hijazi, Hadi; Castelluci, Dominique; Dubrovskii, Vladimir G.; Trassoudaine, Agnès; Goktas, Nebile Isik; Lapierre, Ray R.; André, Yamina.

In: CrystEngComm, Vol. 23, No. 2, 14.01.2021, p. 378-384.

Research output: Contribution to journal › Article › peer-review

Harvard

Grégoire, G, Gil, E, Zeghouane, M, Bougerol, C, Hijazi, H, Castelluci, D, Dubrovskii, VG, Trassoudaine, A, Goktas, NI, Lapierre, RR & André, Y 2021, 'Long catalyst-free InAs nanowires grown on silicon by HVPE', CrystEngComm, vol. 23, no. 2, pp. 378-384. https://doi.org/10.1039/d0ce01385d

APA

Grégoire, G., Gil, E., Zeghouane, M., Bougerol, C., Hijazi, H., Castelluci, D., Dubrovskii, V. G., Trassoudaine, A., Goktas, N. I., Lapierre, R. R., & André, Y. (2021). Long catalyst-free InAs nanowires grown on silicon by HVPE. CrystEngComm, 23(2), 378-384. https://doi.org/10.1039/d0ce01385d

Vancouver

Grégoire G, Gil E, Zeghouane M, Bougerol C, Hijazi H, Castelluci D et al. Long catalyst-free InAs nanowires grown on silicon by HVPE. CrystEngComm. 2021 Jan 14;23(2):378-384. https://doi.org/10.1039/d0ce01385d

Author

Grégoire, Gabin ; Gil, Evelyne ; Zeghouane, Mohammed ; Bougerol, Catherine ; Hijazi, Hadi ; Castelluci, Dominique ; Dubrovskii, Vladimir G. ; Trassoudaine, Agnès ; Goktas, Nebile Isik ; Lapierre, Ray R. ; André, Yamina. / Long catalyst-free InAs nanowires grown on silicon by HVPE. In: CrystEngComm. 2021 ; Vol. 23, No. 2. pp. 378-384.

BibTeX

@article{b3eb127bd4ae4de9a281c487343ddfd1,
title = "Long catalyst-free InAs nanowires grown on silicon by HVPE",
abstract = "We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate grown at a standard rate of 50 μm h-1. The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As4/As2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon. This journal is ",
keywords = "SURFACE-DIFFUSION, EPITAXIAL-GROWTH, V/III RATIO, GAAS, PHASE, MECHANISM, DIAMETER, SI(111), LAYERS",
author = "Gabin Gr{\'e}goire and Evelyne Gil and Mohammed Zeghouane and Catherine Bougerol and Hadi Hijazi and Dominique Castelluci and Dubrovskii, {Vladimir G.} and Agn{\`e}s Trassoudaine and Goktas, {Nebile Isik} and Lapierre, {Ray R.} and Yamina Andr{\'e}",
note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",
year = "2021",
month = jan,
day = "14",
doi = "10.1039/d0ce01385d",
language = "English",
volume = "23",
pages = "378--384",
journal = "CrystEngComm",
issn = "1466-8033",
publisher = "Royal Society of Chemistry",
number = "2",

}

RIS

TY - JOUR

T1 - Long catalyst-free InAs nanowires grown on silicon by HVPE

AU - Grégoire, Gabin

AU - Gil, Evelyne

AU - Zeghouane, Mohammed

AU - Bougerol, Catherine

AU - Hijazi, Hadi

AU - Castelluci, Dominique

AU - Dubrovskii, Vladimir G.

AU - Trassoudaine, Agnès

AU - Goktas, Nebile Isik

AU - Lapierre, Ray R.

AU - André, Yamina

N1 - Publisher Copyright: © The Royal Society of Chemistry.

PY - 2021/1/14

Y1 - 2021/1/14

N2 - We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate grown at a standard rate of 50 μm h-1. The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As4/As2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon. This journal is

AB - We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate grown at a standard rate of 50 μm h-1. The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As4/As2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon. This journal is

KW - SURFACE-DIFFUSION

KW - EPITAXIAL-GROWTH

KW - V/III RATIO

KW - GAAS

KW - PHASE

KW - MECHANISM

KW - DIAMETER

KW - SI(111)

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85099546747&partnerID=8YFLogxK

U2 - 10.1039/d0ce01385d

DO - 10.1039/d0ce01385d

M3 - Article

AN - SCOPUS:85099546747

VL - 23

SP - 378

EP - 384

JO - CrystEngComm

JF - CrystEngComm

SN - 1466-8033

IS - 2

ER -

ID: 88771647