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Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon. / Лендяшова, Вера Вадимовна; Илькив, Игорь Владимирович; Талалаев, Вадим Геннадьевич; Шугабаев, Талгат; Резник, Родион Романович; Цырлин, Георгий Эрнстович.

в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том 92, № 4, 01.04.2025, стр. 14-21.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Лендяшова, ВВ, Илькив, ИВ, Талалаев, ВГ, Шугабаев, Т, Резник, РР & Цырлин, ГЭ 2025, 'Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon', Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том. 92, № 4, стр. 14-21. https://doi.org/10.17586/1023-5086-2025-92-04-14-21

APA

Лендяшова, В. В., Илькив, И. В., Талалаев, В. Г., Шугабаев, Т., Резник, Р. Р., & Цырлин, Г. Э. (2025). Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon. Journal of Optical Technology (A Translation of Opticheskii Zhurnal), 92(4), 14-21. https://doi.org/10.17586/1023-5086-2025-92-04-14-21

Vancouver

Лендяшова ВВ, Илькив ИВ, Талалаев ВГ, Шугабаев Т, Резник РР, Цырлин ГЭ. Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon. Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2025 Апр. 1;92(4):14-21. https://doi.org/10.17586/1023-5086-2025-92-04-14-21

Author

Лендяшова, Вера Вадимовна ; Илькив, Игорь Владимирович ; Талалаев, Вадим Геннадьевич ; Шугабаев, Талгат ; Резник, Родион Романович ; Цырлин, Георгий Эрнстович. / Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon. в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2025 ; Том 92, № 4. стр. 14-21.

BibTeX

@article{aa96681951584d5d816a60fc1e5f9d88,
title = "Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon",
abstract = "The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from submonolayer quantum dots at low temperatures up to 120 K was obtained. It was established that the use of a two-stage method of silicon overgrowing InAs nanoislands makes it possible to increase the photoluminescence intensity by improving the crystalline quality of heterostructures. Analysis of the temperature dependence allowed us to calculate an activation energy for electrons confined in the quantum dots potential well at the level of the thermal energy at room temperature.",
author = "Лендяшова, {Вера Вадимовна} and Илькив, {Игорь Владимирович} and Талалаев, {Вадим Геннадьевич} and Талгат Шугабаев and Резник, {Родион Романович} and Цырлин, {Георгий Эрнстович}",
note = "Vera V. Lendyashova, Igor V. Ilkiv, Vadim G. Talalaev, Talgat Shugabaev, Rodion R. Reznik, George E. Cirlin {"}Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon{"} Opticheskii Zhurnal. 2024. V. 92. № 4. ",
year = "2025",
month = apr,
day = "1",
doi = "10.17586/1023-5086-2025-92-04-14-21",
language = "English",
volume = "92",
pages = "14--21",
journal = "Journal of Optical Technology (A Translation of Opticheskii Zhurnal)",
issn = "1070-9762",
publisher = "The Optical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

AU - Лендяшова, Вера Вадимовна

AU - Илькив, Игорь Владимирович

AU - Талалаев, Вадим Геннадьевич

AU - Шугабаев, Талгат

AU - Резник, Родион Романович

AU - Цырлин, Георгий Эрнстович

N1 - Vera V. Lendyashova, Igor V. Ilkiv, Vadim G. Talalaev, Talgat Shugabaev, Rodion R. Reznik, George E. Cirlin "Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon" Opticheskii Zhurnal. 2024. V. 92. № 4.

PY - 2025/4/1

Y1 - 2025/4/1

N2 - The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from submonolayer quantum dots at low temperatures up to 120 K was obtained. It was established that the use of a two-stage method of silicon overgrowing InAs nanoislands makes it possible to increase the photoluminescence intensity by improving the crystalline quality of heterostructures. Analysis of the temperature dependence allowed us to calculate an activation energy for electrons confined in the quantum dots potential well at the level of the thermal energy at room temperature.

AB - The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from submonolayer quantum dots at low temperatures up to 120 K was obtained. It was established that the use of a two-stage method of silicon overgrowing InAs nanoislands makes it possible to increase the photoluminescence intensity by improving the crystalline quality of heterostructures. Analysis of the temperature dependence allowed us to calculate an activation energy for electrons confined in the quantum dots potential well at the level of the thermal energy at room temperature.

UR - https://www.mendeley.com/catalogue/82765d1b-83bd-30f7-82e5-b50697a74521/

U2 - 10.17586/1023-5086-2025-92-04-14-21

DO - 10.17586/1023-5086-2025-92-04-14-21

M3 - Article

VL - 92

SP - 14

EP - 21

JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

SN - 1070-9762

IS - 4

ER -

ID: 125775256