Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

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Improving the yield of GaAs nanowires on silicon by Ga pre-deposition. / Wilson, D. P.; Dubrovskii, V. G.; Lapierre, R. R.

в: Nanotechnology, Том 32, № 26, 265301, 25.06.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{674415ad4e6e4eca8d9fda5bcfd19a46,

title = "Improving the yield of GaAs nanowires on silicon by Ga pre-deposition",

abstract = "GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume. ",

keywords = "GaAs, molecular beam epitaxy, nanowire",

author = "Wilson, {D. P.} and Dubrovskii, {V. G.} and Lapierre, {R. R.}",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd.",

year = "2021",

month = jun,

day = "25",

doi = "10.1088/1361-6528/abef93",

language = "English",

volume = "32",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "26",

}

RIS

TY - JOUR

T1 - Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

AU - Wilson, D. P.

AU - Dubrovskii, V. G.

AU - Lapierre, R. R.

PY - 2021/6/25

Y1 - 2021/6/25

N2 - GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.

AB - GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.

KW - GaAs

KW - molecular beam epitaxy

KW - nanowire

UR - http://www.scopus.com/inward/record.url?scp=85104803860&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/abef93

DO - 10.1088/1361-6528/abef93

M3 - Article

AN - SCOPUS:85104803860

VL - 32

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 26

M1 - 265301

ER -

ID: 88770347

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