Research output: Contribution to journal › Article › peer-review
Improving the yield of GaAs nanowires on silicon by Ga pre-deposition. / Wilson, D. P.; Dubrovskii, V. G.; Lapierre, R. R.
In: Nanotechnology, Vol. 32, No. 26, 265301, 25.06.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Improving the yield of GaAs nanowires on silicon by Ga pre-deposition
AU - Wilson, D. P.
AU - Dubrovskii, V. G.
AU - Lapierre, R. R.
N1 - Publisher Copyright: © 2021 IOP Publishing Ltd.
PY - 2021/6/25
Y1 - 2021/6/25
N2 - GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.
AB - GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.
KW - GaAs
KW - molecular beam epitaxy
KW - nanowire
UR - http://www.scopus.com/inward/record.url?scp=85104803860&partnerID=8YFLogxK
U2 - 10.1088/1361-6528/abef93
DO - 10.1088/1361-6528/abef93
M3 - Article
AN - SCOPUS:85104803860
VL - 32
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 26
M1 - 265301
ER -
ID: 88770347