Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. / Shugurov, K. Yu.; Mozharov, A. M.; Bolshakov, A. D.; Fedorov, V. V.; Sapunov, G. A.; Shtrom, I. V.; Uvarov, A. V.; Kudryashov, D. A.; Baranov, A. I.; Mikhailovskii, V.Yu.; Neplokh, V. V.; Tchernycheva, M.; Cirlin, G. E.; Mukhin, I. S.
в: Nanotechnology, Том 31, № 24, 244003, 27.03.2020.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
AU - Shugurov, K. Yu.
AU - Mozharov, A. M.
AU - Bolshakov, A. D.
AU - Fedorov, V. V.
AU - Sapunov, G. A.
AU - Shtrom, I. V.
AU - Uvarov, A. V.
AU - Kudryashov, D. A.
AU - Baranov, A. I.
AU - Mikhailovskii, V.Yu.
AU - Neplokh, V. V.
AU - Tchernycheva, M.
AU - Cirlin, G. E.
AU - Mukhin, I. S.
PY - 2020/3/27
Y1 - 2020/3/27
N2 - The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.
AB - The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.
KW - GaN
KW - nanowires
KW - Si
KW - passivation
KW - hydrogen
KW - INDUCED DEFECTS
KW - SILICON
KW - GROWTH
KW - NUCLEATION
KW - SUBSTRATE
UR - http://www.scopus.com/inward/record.url?scp=85084428149&partnerID=8YFLogxK
U2 - 10.1088/1361-6528/ab76f2
DO - 10.1088/1361-6528/ab76f2
M3 - Article
C2 - 32066120
AN - SCOPUS:85084428149
VL - 31
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 24
M1 - 244003
ER -
ID: 62766998