Standard

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. / Shugurov, K. Yu.; Mozharov, A. M.; Bolshakov, A. D.; Fedorov, V. V.; Sapunov, G. A.; Shtrom, I. V.; Uvarov, A. V.; Kudryashov, D. A.; Baranov, A. I.; Mikhailovskii, V.Yu.; Neplokh, V. V.; Tchernycheva, M.; Cirlin, G. E.; Mukhin, I. S.

In: Nanotechnology, Vol. 31, No. 24, 244003, 27.03.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Shugurov, KY, Mozharov, AM, Bolshakov, AD, Fedorov, VV, Sapunov, GA, Shtrom, IV, Uvarov, AV, Kudryashov, DA, Baranov, AI, Mikhailovskii, VY, Neplokh, VV, Tchernycheva, M, Cirlin, GE & Mukhin, IS 2020, 'Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface', Nanotechnology, vol. 31, no. 24, 244003. https://doi.org/10.1088/1361-6528/ab76f2

APA

Shugurov, K. Y., Mozharov, A. M., Bolshakov, A. D., Fedorov, V. V., Sapunov, G. A., Shtrom, I. V., Uvarov, A. V., Kudryashov, D. A., Baranov, A. I., Mikhailovskii, V. Y., Neplokh, V. V., Tchernycheva, M., Cirlin, G. E., & Mukhin, I. S. (2020). Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. Nanotechnology, 31(24), [244003]. https://doi.org/10.1088/1361-6528/ab76f2

Vancouver

Shugurov KY, Mozharov AM, Bolshakov AD, Fedorov VV, Sapunov GA, Shtrom IV et al. Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. Nanotechnology. 2020 Mar 27;31(24). 244003. https://doi.org/10.1088/1361-6528/ab76f2

Author

Shugurov, K. Yu. ; Mozharov, A. M. ; Bolshakov, A. D. ; Fedorov, V. V. ; Sapunov, G. A. ; Shtrom, I. V. ; Uvarov, A. V. ; Kudryashov, D. A. ; Baranov, A. I. ; Mikhailovskii, V.Yu. ; Neplokh, V. V. ; Tchernycheva, M. ; Cirlin, G. E. ; Mukhin, I. S. / Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. In: Nanotechnology. 2020 ; Vol. 31, No. 24.

BibTeX

@article{c04280d1dcdf457cb84e1e1047e813b3,
title = "Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface",
abstract = "The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.",
keywords = "GaN, nanowires, Si, passivation, hydrogen, INDUCED DEFECTS, SILICON, GROWTH, NUCLEATION, SUBSTRATE",
author = "Shugurov, {K. Yu.} and Mozharov, {A. M.} and Bolshakov, {A. D.} and Fedorov, {V. V.} and Sapunov, {G. A.} and Shtrom, {I. V.} and Uvarov, {A. V.} and Kudryashov, {D. A.} and Baranov, {A. I.} and V.Yu. Mikhailovskii and Neplokh, {V. V.} and M. Tchernycheva and Cirlin, {G. E.} and Mukhin, {I. S.}",
year = "2020",
month = mar,
day = "27",
doi = "10.1088/1361-6528/ab76f2",
language = "English",
volume = "31",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "24",

}

RIS

TY - JOUR

T1 - Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

AU - Shugurov, K. Yu.

AU - Mozharov, A. M.

AU - Bolshakov, A. D.

AU - Fedorov, V. V.

AU - Sapunov, G. A.

AU - Shtrom, I. V.

AU - Uvarov, A. V.

AU - Kudryashov, D. A.

AU - Baranov, A. I.

AU - Mikhailovskii, V.Yu.

AU - Neplokh, V. V.

AU - Tchernycheva, M.

AU - Cirlin, G. E.

AU - Mukhin, I. S.

PY - 2020/3/27

Y1 - 2020/3/27

N2 - The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.

AB - The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.

KW - GaN

KW - nanowires

KW - Si

KW - passivation

KW - hydrogen

KW - INDUCED DEFECTS

KW - SILICON

KW - GROWTH

KW - NUCLEATION

KW - SUBSTRATE

UR - http://www.scopus.com/inward/record.url?scp=85084428149&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab76f2

DO - 10.1088/1361-6528/ab76f2

M3 - Article

C2 - 32066120

AN - SCOPUS:85084428149

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 24

M1 - 244003

ER -

ID: 62766998