DOI

The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.

Язык оригиналаанглийский
Страницы (с-по)1952-1955
Число страниц4
ЖурналPhysics of the Solid State
Том58
Номер выпуска10
DOI
СостояниеОпубликовано - 1 окт 2016

    Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Физика конденсатов

ID: 99724165