Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases. / Shtrom, I. V.; Sibirev, N. V.; Ubiivovk, E. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Reznik, R. R.; Bouravleuv, A. D.; Cirlin, G. E.
в: Semiconductors, Том 52, № 1, 01.01.2018.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
AU - Shtrom, I. V.
AU - Sibirev, N. V.
AU - Ubiivovk, E. V.
AU - Samsonenko, Yu B.
AU - Khrebtov, A. I.
AU - Reznik, R. R.
AU - Bouravleuv, A. D.
AU - Cirlin, G. E.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.
AB - A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.
UR - http://www.scopus.com/inward/record.url?scp=85042109191&partnerID=8YFLogxK
U2 - 10.1134/S1063782618010219
DO - 10.1134/S1063782618010219
M3 - Article
AN - SCOPUS:85042109191
VL - 52
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 1
ER -
ID: 43716395