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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases. / Shtrom, I. V.; Sibirev, N. V.; Ubiivovk, E. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Reznik, R. R.; Bouravleuv, A. D.; Cirlin, G. E.

In: Semiconductors, Vol. 52, No. 1, 01.01.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Shtrom, IV, Sibirev, NV, Ubiivovk, EV, Samsonenko, YB, Khrebtov, AI, Reznik, RR, Bouravleuv, AD & Cirlin, GE 2018, 'GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases', Semiconductors, vol. 52, no. 1. https://doi.org/10.1134/S1063782618010219

APA

Shtrom, I. V., Sibirev, N. V., Ubiivovk, E. V., Samsonenko, Y. B., Khrebtov, A. I., Reznik, R. R., Bouravleuv, A. D., & Cirlin, G. E. (2018). GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases. Semiconductors, 52(1). https://doi.org/10.1134/S1063782618010219

Vancouver

Shtrom IV, Sibirev NV, Ubiivovk EV, Samsonenko YB, Khrebtov AI, Reznik RR et al. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases. Semiconductors. 2018 Jan 1;52(1). https://doi.org/10.1134/S1063782618010219

Author

Shtrom, I. V. ; Sibirev, N. V. ; Ubiivovk, E. V. ; Samsonenko, Yu B. ; Khrebtov, A. I. ; Reznik, R. R. ; Bouravleuv, A. D. ; Cirlin, G. E. / GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases. In: Semiconductors. 2018 ; Vol. 52, No. 1.

BibTeX

@article{0897d0bb9c1f42d8830be0d2a638939f,
title = "GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases",
abstract = "A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.",
author = "Shtrom, {I. V.} and Sibirev, {N. V.} and Ubiivovk, {E. V.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Reznik, {R. R.} and Bouravleuv, {A. D.} and Cirlin, {G. E.}",
year = "2018",
month = jan,
day = "1",
doi = "10.1134/S1063782618010219",
language = "English",
volume = "52",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases

AU - Shtrom, I. V.

AU - Sibirev, N. V.

AU - Ubiivovk, E. V.

AU - Samsonenko, Yu B.

AU - Khrebtov, A. I.

AU - Reznik, R. R.

AU - Bouravleuv, A. D.

AU - Cirlin, G. E.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.

AB - A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.

UR - http://www.scopus.com/inward/record.url?scp=85042109191&partnerID=8YFLogxK

U2 - 10.1134/S1063782618010219

DO - 10.1134/S1063782618010219

M3 - Article

AN - SCOPUS:85042109191

VL - 52

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 43716395