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Electrically controlled spin injection into a ferroelectric semiconductor. / Liu, X.; Burton, J. D.; Zhuravlev, M. Y.; Tsymbal, E. Y.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156869 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Liu, X, Burton, JD, Zhuravlev, MY & Tsymbal, EY 2015, Electrically controlled spin injection into a ferroelectric semiconductor. в 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7156869, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, Китай, 11/05/15. https://doi.org/10.1109/INTMAG.2015.7156869

APA

Liu, X., Burton, J. D., Zhuravlev, M. Y., & Tsymbal, E. Y. (2015). Electrically controlled spin injection into a ferroelectric semiconductor. в 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7156869] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7156869

Vancouver

Liu X, Burton JD, Zhuravlev MY, Tsymbal EY. Electrically controlled spin injection into a ferroelectric semiconductor. в 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7156869. (2015 IEEE International Magnetics Conference, INTERMAG 2015). https://doi.org/10.1109/INTMAG.2015.7156869

Author

Liu, X. ; Burton, J. D. ; Zhuravlev, M. Y. ; Tsymbal, E. Y. / Electrically controlled spin injection into a ferroelectric semiconductor. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE International Magnetics Conference, INTERMAG 2015).

BibTeX

@inproceedings{16db10175a364edeb5ecbb6346bb76da,
title = "Electrically controlled spin injection into a ferroelectric semiconductor",
abstract = "Spin injection is one of the key phenomena exploiting the electron spin degree of freedom in future electronic devices.1 A critical parameter that determines the efficiency of spin-injection is the degree of spin-polarization carried by the current. Significant interest has been addressed to the spin injection into semiconductors,2 and recent developments in the field have demonstrated the possibility of efficient spin-injection and spin-detection in various electronic systems.3,4 All the above results rely however on a 'passive' spin-injection where the degree of transport spin polarization is determined by the spin-polarization of the injector and the detector, and the electronic properties of the interface. Adjustable spin-injection with a controllable degree of spin-polarization would be appealing from the scientific point of view and useful for applications.",
author = "X. Liu and Burton, {J. D.} and Zhuravlev, {M. Y.} and Tsymbal, {E. Y.}",
year = "2015",
month = jul,
day = "14",
doi = "10.1109/INTMAG.2015.7156869",
language = "English",
series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",
address = "United States",
note = "2015 IEEE International Magnetics Conference, INTERMAG 2015 ; Conference date: 11-05-2015 Through 15-05-2015",

}

RIS

TY - GEN

T1 - Electrically controlled spin injection into a ferroelectric semiconductor

AU - Liu, X.

AU - Burton, J. D.

AU - Zhuravlev, M. Y.

AU - Tsymbal, E. Y.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Spin injection is one of the key phenomena exploiting the electron spin degree of freedom in future electronic devices.1 A critical parameter that determines the efficiency of spin-injection is the degree of spin-polarization carried by the current. Significant interest has been addressed to the spin injection into semiconductors,2 and recent developments in the field have demonstrated the possibility of efficient spin-injection and spin-detection in various electronic systems.3,4 All the above results rely however on a 'passive' spin-injection where the degree of transport spin polarization is determined by the spin-polarization of the injector and the detector, and the electronic properties of the interface. Adjustable spin-injection with a controllable degree of spin-polarization would be appealing from the scientific point of view and useful for applications.

AB - Spin injection is one of the key phenomena exploiting the electron spin degree of freedom in future electronic devices.1 A critical parameter that determines the efficiency of spin-injection is the degree of spin-polarization carried by the current. Significant interest has been addressed to the spin injection into semiconductors,2 and recent developments in the field have demonstrated the possibility of efficient spin-injection and spin-detection in various electronic systems.3,4 All the above results rely however on a 'passive' spin-injection where the degree of transport spin polarization is determined by the spin-polarization of the injector and the detector, and the electronic properties of the interface. Adjustable spin-injection with a controllable degree of spin-polarization would be appealing from the scientific point of view and useful for applications.

UR - http://www.scopus.com/inward/record.url?scp=84942475229&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2015.7156869

DO - 10.1109/INTMAG.2015.7156869

M3 - Conference contribution

AN - SCOPUS:84942475229

T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

Y2 - 11 May 2015 through 15 May 2015

ER -

ID: 51234670