Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Electrically controlled spin injection into a ferroelectric semiconductor. / Liu, X.; Burton, J. D.; Zhuravlev, M. Y.; Tsymbal, E. Y.
2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156869 (2015 IEEE International Magnetics Conference, INTERMAG 2015).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
}
TY - GEN
T1 - Electrically controlled spin injection into a ferroelectric semiconductor
AU - Liu, X.
AU - Burton, J. D.
AU - Zhuravlev, M. Y.
AU - Tsymbal, E. Y.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Spin injection is one of the key phenomena exploiting the electron spin degree of freedom in future electronic devices.1 A critical parameter that determines the efficiency of spin-injection is the degree of spin-polarization carried by the current. Significant interest has been addressed to the spin injection into semiconductors,2 and recent developments in the field have demonstrated the possibility of efficient spin-injection and spin-detection in various electronic systems.3,4 All the above results rely however on a 'passive' spin-injection where the degree of transport spin polarization is determined by the spin-polarization of the injector and the detector, and the electronic properties of the interface. Adjustable spin-injection with a controllable degree of spin-polarization would be appealing from the scientific point of view and useful for applications.
AB - Spin injection is one of the key phenomena exploiting the electron spin degree of freedom in future electronic devices.1 A critical parameter that determines the efficiency of spin-injection is the degree of spin-polarization carried by the current. Significant interest has been addressed to the spin injection into semiconductors,2 and recent developments in the field have demonstrated the possibility of efficient spin-injection and spin-detection in various electronic systems.3,4 All the above results rely however on a 'passive' spin-injection where the degree of transport spin polarization is determined by the spin-polarization of the injector and the detector, and the electronic properties of the interface. Adjustable spin-injection with a controllable degree of spin-polarization would be appealing from the scientific point of view and useful for applications.
UR - http://www.scopus.com/inward/record.url?scp=84942475229&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2015.7156869
DO - 10.1109/INTMAG.2015.7156869
M3 - Conference contribution
AN - SCOPUS:84942475229
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -
ID: 51234670