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Spin injection is one of the key phenomena exploiting the electron spin degree of freedom in future electronic devices.1 A critical parameter that determines the efficiency of spin-injection is the degree of spin-polarization carried by the current. Significant interest has been addressed to the spin injection into semiconductors,2 and recent developments in the field have demonstrated the possibility of efficient spin-injection and spin-detection in various electronic systems.3,4 All the above results rely however on a 'passive' spin-injection where the degree of transport spin polarization is determined by the spin-polarization of the injector and the detector, and the electronic properties of the interface. Adjustable spin-injection with a controllable degree of spin-polarization would be appealing from the scientific point of view and useful for applications.
Язык оригинала | английский |
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Название основной публикации | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
Издатель | Institute of Electrical and Electronics Engineers Inc. |
ISBN (электронное издание) | 9781479973224 |
DOI | |
Состояние | Опубликовано - 14 июл 2015 |
Событие | 2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, Китай Продолжительность: 11 мая 2015 → 15 мая 2015 |
Название | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
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конференция | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
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Страна/Tерритория | Китай |
Город | Beijing |
Период | 11/05/15 → 15/05/15 |
ID: 51234670