Standard

Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111). / Gridchin, V. O.; Kotlyar, K. P.; Reznik, R. R.; Borodin, B. R.; Kudryashov, D. A.; Alekseev, P. A.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1695, № 1, 012030, 28.12.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Gridchin, VO, Kotlyar, KP, Reznik, RR, Borodin, BR, Kudryashov, DA, Alekseev, PA & Cirlin, GE 2020, 'Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111)', Journal of Physics: Conference Series, Том. 1695, № 1, 012030. https://doi.org/10.1088/1742-6596/1695/1/012030

APA

Gridchin, V. O., Kotlyar, K. P., Reznik, R. R., Borodin, B. R., Kudryashov, D. A., Alekseev, P. A., & Cirlin, G. E. (2020). Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111). Journal of Physics: Conference Series, 1695(1), [012030]. https://doi.org/10.1088/1742-6596/1695/1/012030

Vancouver

Gridchin VO, Kotlyar KP, Reznik RR, Borodin BR, Kudryashov DA, Alekseev PA и пр. Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111). Journal of Physics: Conference Series. 2020 Дек. 28;1695(1). 012030. https://doi.org/10.1088/1742-6596/1695/1/012030

Author

Gridchin, V. O. ; Kotlyar, K. P. ; Reznik, R. R. ; Borodin, B. R. ; Kudryashov, D. A. ; Alekseev, P. A. ; Cirlin, G. E. / Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111). в: Journal of Physics: Conference Series. 2020 ; Том 1695, № 1.

BibTeX

@article{3956be351cec44639e406d14c3ff27da,
title = "Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111)",
abstract = "The work is devoted to the study of electrical properties of InGaN nanostructures with branched morphology (NSs) on p-type Si substrates. It was found that the IV curves between InGaN NSs and p-Si are close to linear, which could indicate a tunneling conductivity. Such unique structures as InGaN NSs on p-Si can be used as building blocks for water splitting devices and tandem solar cells.",
author = "Gridchin, {V. O.} and Kotlyar, {K. P.} and Reznik, {R. R.} and Borodin, {B. R.} and Kudryashov, {D. A.} and Alekseev, {P. A.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 7th International School and Conference {"}SaintPetersburg OPEN 2020{"} on Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 27-04-2020 Through 30-04-2020",
year = "2020",
month = dec,
day = "28",
doi = "10.1088/1742-6596/1695/1/012030",
language = "English",
volume = "1695",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111)

AU - Gridchin, V. O.

AU - Kotlyar, K. P.

AU - Reznik, R. R.

AU - Borodin, B. R.

AU - Kudryashov, D. A.

AU - Alekseev, P. A.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2020/12/28

Y1 - 2020/12/28

N2 - The work is devoted to the study of electrical properties of InGaN nanostructures with branched morphology (NSs) on p-type Si substrates. It was found that the IV curves between InGaN NSs and p-Si are close to linear, which could indicate a tunneling conductivity. Such unique structures as InGaN NSs on p-Si can be used as building blocks for water splitting devices and tandem solar cells.

AB - The work is devoted to the study of electrical properties of InGaN nanostructures with branched morphology (NSs) on p-type Si substrates. It was found that the IV curves between InGaN NSs and p-Si are close to linear, which could indicate a tunneling conductivity. Such unique structures as InGaN NSs on p-Si can be used as building blocks for water splitting devices and tandem solar cells.

UR - http://www.scopus.com/inward/record.url?scp=85098867956&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1695/1/012030

DO - 10.1088/1742-6596/1695/1/012030

M3 - Conference article

AN - SCOPUS:85098867956

VL - 1695

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012030

T2 - 7th International School and Conference "SaintPetersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 27 April 2020 through 30 April 2020

ER -

ID: 97045455