Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
Electric levels of NiSi2 nanoprecipitates in n- and p-type Si were studied by means of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) The shapes of MCTS spectra of as-quenched as well as annealed p-type samples were found to be similar whereas they differ qualitatively in n-type samples. Experimental results are discussed using energetic diagram of electrical levels of NiSi2 nanoprecipitates in the Si band gap.
| Язык оригинала | английский |
|---|---|
| Страницы (с-по) | 3056-3060 |
| Число страниц | 5 |
| Журнал | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Том | 4 |
| Номер выпуска | 8 |
| DOI | |
| Состояние | Опубликовано - 2007 |
| Событие | International Conference on Extended Defects in Semiconductors, EDS 2006 - Halle, Германия Продолжительность: 17 сен 2006 → 22 сен 2006 |
ID: 87672893