Standard

Electrical levels of nanoscale NiSi2 precipitates in silicon band gap. / Trushin, M. V.; Vyvenko, O. F.

в: Physica Status Solidi (C) Current Topics in Solid State Physics, Том 4, № 8, 2007, стр. 3056-3060.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Trushin, MV & Vyvenko, OF 2007, 'Electrical levels of nanoscale NiSi2 precipitates in silicon band gap', Physica Status Solidi (C) Current Topics in Solid State Physics, Том. 4, № 8, стр. 3056-3060. https://doi.org/10.1002/pssc.200775453

APA

Trushin, M. V., & Vyvenko, O. F. (2007). Electrical levels of nanoscale NiSi2 precipitates in silicon band gap. Physica Status Solidi (C) Current Topics in Solid State Physics, 4(8), 3056-3060. https://doi.org/10.1002/pssc.200775453

Vancouver

Trushin MV, Vyvenko OF. Electrical levels of nanoscale NiSi2 precipitates in silicon band gap. Physica Status Solidi (C) Current Topics in Solid State Physics. 2007;4(8):3056-3060. https://doi.org/10.1002/pssc.200775453

Author

Trushin, M. V. ; Vyvenko, O. F. / Electrical levels of nanoscale NiSi2 precipitates in silicon band gap. в: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; Том 4, № 8. стр. 3056-3060.

BibTeX

@article{644e1bf589024c6bb2387f69bcd254cd,
title = "Electrical levels of nanoscale NiSi2 precipitates in silicon band gap",
abstract = "Electric levels of NiSi2 nanoprecipitates in n- and p-type Si were studied by means of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) The shapes of MCTS spectra of as-quenched as well as annealed p-type samples were found to be similar whereas they differ qualitatively in n-type samples. Experimental results are discussed using energetic diagram of electrical levels of NiSi2 nanoprecipitates in the Si band gap.",
author = "Trushin, {M. V.} and Vyvenko, {O. F.}",
year = "2007",
doi = "10.1002/pssc.200775453",
language = "English",
volume = "4",
pages = "3056--3060",
journal = "Physica Status Solidi C: Conferences",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "8",
note = "International Conference on Extended Defects in Semiconductors, EDS 2006 ; Conference date: 17-09-2006 Through 22-09-2006",

}

RIS

TY - JOUR

T1 - Electrical levels of nanoscale NiSi2 precipitates in silicon band gap

AU - Trushin, M. V.

AU - Vyvenko, O. F.

PY - 2007

Y1 - 2007

N2 - Electric levels of NiSi2 nanoprecipitates in n- and p-type Si were studied by means of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) The shapes of MCTS spectra of as-quenched as well as annealed p-type samples were found to be similar whereas they differ qualitatively in n-type samples. Experimental results are discussed using energetic diagram of electrical levels of NiSi2 nanoprecipitates in the Si band gap.

AB - Electric levels of NiSi2 nanoprecipitates in n- and p-type Si were studied by means of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) The shapes of MCTS spectra of as-quenched as well as annealed p-type samples were found to be similar whereas they differ qualitatively in n-type samples. Experimental results are discussed using energetic diagram of electrical levels of NiSi2 nanoprecipitates in the Si band gap.

UR - http://www.scopus.com/inward/record.url?scp=49549087115&partnerID=8YFLogxK

U2 - 10.1002/pssc.200775453

DO - 10.1002/pssc.200775453

M3 - Conference article

AN - SCOPUS:49549087115

VL - 4

SP - 3056

EP - 3060

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 8

T2 - International Conference on Extended Defects in Semiconductors, EDS 2006

Y2 - 17 September 2006 through 22 September 2006

ER -

ID: 87672893