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Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy. / Seredin, P. V.; Barkov, K. A.; Goloshchapov, D. L.; Lenshin, A. S.; Khudyakov, Yu Yu; Arsentiev, I. N.; Lebedev, A. A.; Sharofidinov, Sh Sh; Mizerov, A. M.; Kasatkin, I. A.; Prutskij, Tatiana.

в: Semiconductors, Том 55, № 12, 12.2021, стр. 995-1001.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Seredin, PV, Barkov, KA, Goloshchapov, DL, Lenshin, AS, Khudyakov, YY, Arsentiev, IN, Lebedev, AA, Sharofidinov, SS, Mizerov, AM, Kasatkin, IA & Prutskij, T 2021, 'Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy', Semiconductors, Том. 55, № 12, стр. 995-1001. https://doi.org/10.1134/S1063782621080170

APA

Seredin, P. V., Barkov, K. A., Goloshchapov, D. L., Lenshin, A. S., Khudyakov, Y. Y., Arsentiev, I. N., Lebedev, A. A., Sharofidinov, S. S., Mizerov, A. M., Kasatkin, I. A., & Prutskij, T. (2021). Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy. Semiconductors, 55(12), 995-1001. https://doi.org/10.1134/S1063782621080170

Vancouver

Seredin PV, Barkov KA, Goloshchapov DL, Lenshin AS, Khudyakov YY, Arsentiev IN и пр. Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy. Semiconductors. 2021 Дек.;55(12):995-1001. https://doi.org/10.1134/S1063782621080170

Author

Seredin, P. V. ; Barkov, K. A. ; Goloshchapov, D. L. ; Lenshin, A. S. ; Khudyakov, Yu Yu ; Arsentiev, I. N. ; Lebedev, A. A. ; Sharofidinov, Sh Sh ; Mizerov, A. M. ; Kasatkin, I. A. ; Prutskij, Tatiana. / Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy. в: Semiconductors. 2021 ; Том 55, № 12. стр. 995-1001.

BibTeX

@article{675b96e753e349f6976dfc0d73cdd4c0,
title = "Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy",
abstract = "Abstract: The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is demonstrated that the use of the technology proposed in the study brings about the formation of a Si transition sublayer in the Si substrate, so that further growth on this sublayer provides the formation of columnar GaN grains, between which there is a thin interlayer of the AlN phase. The epitaxial GaN film possesses low residual stresses, which is reflected in high-intensity luminescence.",
keywords = "AlN, chloride–hydride vapor-phase epitaxy, GaN, photoluminescence, Si",
author = "Seredin, {P. V.} and Barkov, {K. A.} and Goloshchapov, {D. L.} and Lenshin, {A. S.} and Khudyakov, {Yu Yu} and Arsentiev, {I. N.} and Lebedev, {A. A.} and Sharofidinov, {Sh Sh} and Mizerov, {A. M.} and Kasatkin, {I. A.} and Tatiana Prutskij",
note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = dec,
doi = "10.1134/S1063782621080170",
language = "English",
volume = "55",
pages = "995--1001",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",

}

RIS

TY - JOUR

T1 - Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy

AU - Seredin, P. V.

AU - Barkov, K. A.

AU - Goloshchapov, D. L.

AU - Lenshin, A. S.

AU - Khudyakov, Yu Yu

AU - Arsentiev, I. N.

AU - Lebedev, A. A.

AU - Sharofidinov, Sh Sh

AU - Mizerov, A. M.

AU - Kasatkin, I. A.

AU - Prutskij, Tatiana

N1 - Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/12

Y1 - 2021/12

N2 - Abstract: The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is demonstrated that the use of the technology proposed in the study brings about the formation of a Si transition sublayer in the Si substrate, so that further growth on this sublayer provides the formation of columnar GaN grains, between which there is a thin interlayer of the AlN phase. The epitaxial GaN film possesses low residual stresses, which is reflected in high-intensity luminescence.

AB - Abstract: The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is demonstrated that the use of the technology proposed in the study brings about the formation of a Si transition sublayer in the Si substrate, so that further growth on this sublayer provides the formation of columnar GaN grains, between which there is a thin interlayer of the AlN phase. The epitaxial GaN film possesses low residual stresses, which is reflected in high-intensity luminescence.

KW - AlN

KW - chloride–hydride vapor-phase epitaxy

KW - GaN

KW - photoluminescence

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=85126852012&partnerID=8YFLogxK

U2 - 10.1134/S1063782621080170

DO - 10.1134/S1063782621080170

M3 - Article

AN - SCOPUS:85126852012

VL - 55

SP - 995

EP - 1001

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 94004757