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Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy. / Seredin, P. V.; Barkov, K. A.; Goloshchapov, D. L.; Lenshin, A. S.; Khudyakov, Yu Yu; Arsentiev, I. N.; Lebedev, A. A.; Sharofidinov, Sh Sh; Mizerov, A. M.; Kasatkin, I. A.; Prutskij, Tatiana.
In:
Semiconductors, Vol. 55, No. 12, 12.2021, p. 995-1001.
Research output: Contribution to journal › Article › peer-review
Harvard
Seredin, PV, Barkov, KA, Goloshchapov, DL
, Lenshin, AS, Khudyakov, YY, Arsentiev, IN, Lebedev, AA, Sharofidinov, SS, Mizerov, AM, Kasatkin, IA & Prutskij, T 2021, '
Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy',
Semiconductors, vol. 55, no. 12, pp. 995-1001.
https://doi.org/10.1134/S1063782621080170APA
Seredin, P. V., Barkov, K. A., Goloshchapov, D. L.
, Lenshin, A. S., Khudyakov, Y. Y., Arsentiev, I. N., Lebedev, A. A., Sharofidinov, S. S., Mizerov, A. M., Kasatkin, I. A., & Prutskij, T. (2021).
Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.
Semiconductors,
55(12), 995-1001.
https://doi.org/10.1134/S1063782621080170Vancouver
Author
Seredin, P. V. ; Barkov, K. A. ; Goloshchapov, D. L.
; Lenshin, A. S. ; Khudyakov, Yu Yu ; Arsentiev, I. N. ; Lebedev, A. A. ; Sharofidinov, Sh Sh ; Mizerov, A. M. ; Kasatkin, I. A. ; Prutskij, Tatiana. /
Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy. In:
Semiconductors. 2021 ; Vol. 55, No. 12. pp. 995-1001.
BibTeX
@article{675b96e753e349f6976dfc0d73cdd4c0,
title = "Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy",
abstract = "Abstract: The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is demonstrated that the use of the technology proposed in the study brings about the formation of a Si transition sublayer in the Si substrate, so that further growth on this sublayer provides the formation of columnar GaN grains, between which there is a thin interlayer of the AlN phase. The epitaxial GaN film possesses low residual stresses, which is reflected in high-intensity luminescence.",
keywords = "AlN, chloride–hydride vapor-phase epitaxy, GaN, photoluminescence, Si",
author = "Seredin, {P. V.} and Barkov, {K. A.} and Goloshchapov, {D. L.} and Lenshin, {A. S.} and Khudyakov, {Yu Yu} and Arsentiev, {I. N.} and Lebedev, {A. A.} and Sharofidinov, {Sh Sh} and Mizerov, {A. M.} and Kasatkin, {I. A.} and Tatiana Prutskij",
note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = dec,
doi = "10.1134/S1063782621080170",
language = "English",
volume = "55",
pages = "995--1001",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",
}
RIS
TY - JOUR
T1 - Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy
AU - Seredin, P. V.
AU - Barkov, K. A.
AU - Goloshchapov, D. L.
AU - Lenshin, A. S.
AU - Khudyakov, Yu Yu
AU - Arsentiev, I. N.
AU - Lebedev, A. A.
AU - Sharofidinov, Sh Sh
AU - Mizerov, A. M.
AU - Kasatkin, I. A.
AU - Prutskij, Tatiana
N1 - Publisher Copyright:
© 2021, Pleiades Publishing, Ltd.
PY - 2021/12
Y1 - 2021/12
N2 - Abstract: The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is demonstrated that the use of the technology proposed in the study brings about the formation of a Si transition sublayer in the Si substrate, so that further growth on this sublayer provides the formation of columnar GaN grains, between which there is a thin interlayer of the AlN phase. The epitaxial GaN film possesses low residual stresses, which is reflected in high-intensity luminescence.
AB - Abstract: The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is demonstrated that the use of the technology proposed in the study brings about the formation of a Si transition sublayer in the Si substrate, so that further growth on this sublayer provides the formation of columnar GaN grains, between which there is a thin interlayer of the AlN phase. The epitaxial GaN film possesses low residual stresses, which is reflected in high-intensity luminescence.
KW - AlN
KW - chloride–hydride vapor-phase epitaxy
KW - GaN
KW - photoluminescence
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=85126852012&partnerID=8YFLogxK
U2 - 10.1134/S1063782621080170
DO - 10.1134/S1063782621080170
M3 - Article
AN - SCOPUS:85126852012
VL - 55
SP - 995
EP - 1001
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 12
ER -
