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Effect of deposition technique on chemical bonding and amount of porogen residuals in organosilicate glasses: NEXAFS study. / Konashuk, A. ; Filatova, E. ; Sakhonenkov, S. ; Afanas'ev, V. V.

в: Microelectronic Engineering, № Special Issue, 2017.

Результаты исследований: Научные публикации в периодических изданияхтезисыРецензирование

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@article{669a2ff75d30418f8f82e38389fd23af,
title = "Effect of deposition technique on chemical bonding and amount of porogen residuals in organosilicate glasses: NEXAFS study",
author = "A. Konashuk and E. Filatova and S. Sakhonenkov and Afanas'ev, {V. V.}",
year = "2017",
language = "English",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "Special Issue",
note = " 20th Conference on Insulating Films on Semiconductors, INFOS2017 ; Conference date: 27-06-2017 Through 30-06-2017",

}

RIS

TY - JOUR

T1 - Effect of deposition technique on chemical bonding and amount of porogen residuals in organosilicate glasses: NEXAFS study

AU - Konashuk, A.

AU - Filatova, E.

AU - Sakhonenkov, S.

AU - Afanas'ev, V. V.

PY - 2017

Y1 - 2017

UR - https://www.researchgate.net/publication/316969012_Effect_of_deposition_technique_on_chemical_bonding_and_amount_of_porogen_residues_in_organosilicate_glass

M3 - Meeting Abstract

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - Special Issue

T2 - 20th Conference on Insulating Films on Semiconductors

Y2 - 27 June 2017 through 30 June 2017

ER -

ID: 94122924