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Dynamics of monolayer growth in vapor–liquid–solid gaas nanowires based on surface energy minimization. / Hijazi, Hadi; Dubrovskii, Vladimir G.

в: Nanomaterials, Том 11, № 7, 1681, 07.2021.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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@article{2312d81421d14662835675dca97256ca,
title = "Dynamics of monolayer growth in vapor–liquid–solid gaas nanowires based on surface energy minimization",
abstract = "The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.",
keywords = "Monolayer step, Nanowires, Surface energy, Vapor–liquid–solid growth, monolayer step, nanowires, surface energy, vapor-liquid-solid growth",
author = "Hadi Hijazi and Dubrovskii, {Vladimir G.}",
note = "Publisher Copyright: {\textcopyright} 2021 by the authors.",
year = "2021",
month = jul,
doi = "10.3390/nano11071681",
language = "English",
volume = "11",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "7",

}

RIS

TY - JOUR

T1 - Dynamics of monolayer growth in vapor–liquid–solid gaas nanowires based on surface energy minimization

AU - Hijazi, Hadi

AU - Dubrovskii, Vladimir G.

N1 - Publisher Copyright: © 2021 by the authors.

PY - 2021/7

Y1 - 2021/7

N2 - The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

AB - The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

KW - Monolayer step

KW - Nanowires

KW - Surface energy

KW - Vapor–liquid–solid growth

KW - monolayer step

KW - nanowires

KW - surface energy

KW - vapor-liquid-solid growth

UR - http://www.scopus.com/inward/record.url?scp=85108628441&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/2cdc658b-5c02-326c-82fb-6eccaa9e28d1/

U2 - 10.3390/nano11071681

DO - 10.3390/nano11071681

M3 - Article

AN - SCOPUS:85108628441

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 7

M1 - 1681

ER -

ID: 88770277