Research output: Contribution to journal › Article › peer-review
Dynamics of monolayer growth in vapor–liquid–solid gaas nanowires based on surface energy minimization. / Hijazi, Hadi; Dubrovskii, Vladimir G.
In: Nanomaterials, Vol. 11, No. 7, 1681, 07.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Dynamics of monolayer growth in vapor–liquid–solid gaas nanowires based on surface energy minimization
AU - Hijazi, Hadi
AU - Dubrovskii, Vladimir G.
N1 - Publisher Copyright: © 2021 by the authors.
PY - 2021/7
Y1 - 2021/7
N2 - The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.
AB - The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.
KW - Monolayer step
KW - Nanowires
KW - Surface energy
KW - Vapor–liquid–solid growth
KW - monolayer step
KW - nanowires
KW - surface energy
KW - vapor-liquid-solid growth
UR - http://www.scopus.com/inward/record.url?scp=85108628441&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/2cdc658b-5c02-326c-82fb-6eccaa9e28d1/
U2 - 10.3390/nano11071681
DO - 10.3390/nano11071681
M3 - Article
AN - SCOPUS:85108628441
VL - 11
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 7
M1 - 1681
ER -
ID: 88770277