Standard
Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires. / Dubrovskii, V. G.; Sibirev, N. V.; Fedorov, V. V.; Dvoretckaia, L. N.; Kirilenko, D. A.; Mukhin, I. S.; Ghukasyan, A.; Goktas, N. I.; Lapierre, R. R.
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference Laser Optics, ICLO 2022 - Proceedingss).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Harvard
Dubrovskii, VG, Sibirev, NV, Fedorov, VV, Dvoretckaia, LN
, Kirilenko, DA, Mukhin, IS, Ghukasyan, A, Goktas, NI & Lapierre, RR 2022,
Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires. в
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss, Institute of Electrical and Electronics Engineers Inc., 2022 International Conference Laser Optics, ICLO 2022, St. Petersburg, Российская Федерация,
20/06/22.
https://doi.org/10.1109/iclo54117.2022.9840250
APA
Dubrovskii, V. G., Sibirev, N. V., Fedorov, V. V., Dvoretckaia, L. N.
, Kirilenko, D. A., Mukhin, I. S., Ghukasyan, A., Goktas, N. I., & Lapierre, R. R. (2022).
Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires. в
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss (2022 International Conference Laser Optics, ICLO 2022 - Proceedingss). Institute of Electrical and Electronics Engineers Inc..
https://doi.org/10.1109/iclo54117.2022.9840250
Vancouver
Author
Dubrovskii, V. G. ; Sibirev, N. V. ; Fedorov, V. V. ; Dvoretckaia, L. N.
; Kirilenko, D. A. ; Mukhin, I. S. ; Ghukasyan, A. ; Goktas, N. I. ; Lapierre, R. R. /
Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires. 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference Laser Optics, ICLO 2022 - Proceedingss).
BibTeX
@inproceedings{90d2094c74934dcfaeb95a7f26c57941,
title = "Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires",
abstract = "We discuss the droplet contact angle as the key parameter influencing the morphology and the related crystal phase of vapor-liquid-solid III-V nanowires. In particular, we show that twinning superlattice Te-doped GaAs nanowires are formed only when the droplet contact angle is above 130°, and that pure wurtzite sections in self-catalyzed GaP nanowires are obtained in the stage of Ga droplet consumption when the contact angle is within the range from 95° to 105°. ",
keywords = "crystal phase, droplet contact angle, twinning superlattice",
author = "Dubrovskii, {V. G.} and Sibirev, {N. V.} and Fedorov, {V. V.} and Dvoretckaia, {L. N.} and Kirilenko, {D. A.} and Mukhin, {I. S.} and A. Ghukasyan and Goktas, {N. I.} and Lapierre, {R. R.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Conference Laser Optics, ICLO 2022 ; Conference date: 20-06-2022 Through 24-06-2022",
year = "2022",
month = jun,
day = "20",
doi = "10.1109/iclo54117.2022.9840250",
language = "English",
isbn = "9781665466646",
series = "2022 International Conference Laser Optics, ICLO 2022 - Proceedingss",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 International Conference Laser Optics, ICLO 2022 - Proceedingss",
address = "United States",
}
RIS
TY - GEN
T1 - Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires
AU - Dubrovskii, V. G.
AU - Sibirev, N. V.
AU - Fedorov, V. V.
AU - Dvoretckaia, L. N.
AU - Kirilenko, D. A.
AU - Mukhin, I. S.
AU - Ghukasyan, A.
AU - Goktas, N. I.
AU - Lapierre, R. R.
N1 - Conference code: 20
PY - 2022/6/20
Y1 - 2022/6/20
N2 - We discuss the droplet contact angle as the key parameter influencing the morphology and the related crystal phase of vapor-liquid-solid III-V nanowires. In particular, we show that twinning superlattice Te-doped GaAs nanowires are formed only when the droplet contact angle is above 130°, and that pure wurtzite sections in self-catalyzed GaP nanowires are obtained in the stage of Ga droplet consumption when the contact angle is within the range from 95° to 105°.
AB - We discuss the droplet contact angle as the key parameter influencing the morphology and the related crystal phase of vapor-liquid-solid III-V nanowires. In particular, we show that twinning superlattice Te-doped GaAs nanowires are formed only when the droplet contact angle is above 130°, and that pure wurtzite sections in self-catalyzed GaP nanowires are obtained in the stage of Ga droplet consumption when the contact angle is within the range from 95° to 105°.
KW - crystal phase
KW - droplet contact angle
KW - twinning superlattice
UR - http://www.scopus.com/inward/record.url?scp=85136375690&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/e7a81d14-5987-36d7-a1e9-f97c2720b8d3/
U2 - 10.1109/iclo54117.2022.9840250
DO - 10.1109/iclo54117.2022.9840250
M3 - Conference contribution
AN - SCOPUS:85136375690
SN - 9781665466646
T3 - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
BT - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Conference Laser Optics, ICLO 2022
Y2 - 20 June 2022 through 24 June 2022
ER -
