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Direct Band Gap AlGaAs Wurtzite Nanowires. / Barettin, Daniele; Штром, Игорь Викторович; Резник, Родион Романович; Микушев, Сергей Владимирович; Цырлин, Георгий Эрнстович; Auf der Maur, Matthias ; Akopian, N.

в: Nano Letters, Том 23, № 3, 17.01.2023, стр. 895-901.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Barettin, D, Штром, ИВ, Резник, РР, Микушев, СВ, Цырлин, ГЭ, Auf der Maur, M & Akopian, N 2023, 'Direct Band Gap AlGaAs Wurtzite Nanowires', Nano Letters, Том. 23, № 3, стр. 895-901. https://doi.org/10.1021/acs.nanolett.2c04184

APA

Barettin, D., Штром, И. В., Резник, Р. Р., Микушев, С. В., Цырлин, Г. Э., Auf der Maur, M., & Akopian, N. (2023). Direct Band Gap AlGaAs Wurtzite Nanowires. Nano Letters, 23(3), 895-901. https://doi.org/10.1021/acs.nanolett.2c04184

Vancouver

Barettin D, Штром ИВ, Резник РР, Микушев СВ, Цырлин ГЭ, Auf der Maur M и пр. Direct Band Gap AlGaAs Wurtzite Nanowires. Nano Letters. 2023 Янв. 17;23(3):895-901. https://doi.org/10.1021/acs.nanolett.2c04184

Author

Barettin, Daniele ; Штром, Игорь Викторович ; Резник, Родион Романович ; Микушев, Сергей Владимирович ; Цырлин, Георгий Эрнстович ; Auf der Maur, Matthias ; Akopian, N. / Direct Band Gap AlGaAs Wurtzite Nanowires. в: Nano Letters. 2023 ; Том 23, № 3. стр. 895-901.

BibTeX

@article{2a29049cb92342008e0cddfdfbe48125,
title = "Direct Band Gap AlGaAs Wurtzite Nanowires",
abstract = "Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band Formula Presented method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.",
keywords = "GaAs/AlGaAs, Modeling, Nanowires, k⃗·p⃗, wurtize",
author = "Daniele Barettin and Штром, {Игорь Викторович} and Резник, {Родион Романович} and Микушев, {Сергей Владимирович} and Цырлин, {Георгий Эрнстович} and {Auf der Maur}, Matthias and N. Akopian",
note = "Barettin D. et al. Direct Band Gap AlGaAs Wurtzite Nanowires //Nano Letters. – 23, 3, 895–901, 2023.",
year = "2023",
month = jan,
day = "17",
doi = "10.1021/acs.nanolett.2c04184",
language = "English",
volume = "23",
pages = "895--901",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Direct Band Gap AlGaAs Wurtzite Nanowires

AU - Barettin, Daniele

AU - Штром, Игорь Викторович

AU - Резник, Родион Романович

AU - Микушев, Сергей Владимирович

AU - Цырлин, Георгий Эрнстович

AU - Auf der Maur, Matthias

AU - Akopian, N.

N1 - Barettin D. et al. Direct Band Gap AlGaAs Wurtzite Nanowires //Nano Letters. – 23, 3, 895–901, 2023.

PY - 2023/1/17

Y1 - 2023/1/17

N2 - Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band Formula Presented method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.

AB - Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band Formula Presented method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.

KW - GaAs/AlGaAs

KW - Modeling

KW - Nanowires

KW - k⃗·p⃗

KW - wurtize

UR - https://www.mendeley.com/catalogue/f0dd157d-4682-3329-b992-e6cbe042a49d/

U2 - 10.1021/acs.nanolett.2c04184

DO - 10.1021/acs.nanolett.2c04184

M3 - Article

VL - 23

SP - 895

EP - 901

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 3

ER -

ID: 105655161