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Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes. / Konashuk, Aleksei S. ; Filatova, Elena O. ; Sakhonenkov, Sergei S. ; Kolomiiets, Nadiia M. ; Afanas’ev, Valeri V.

в: Journal of Physical Chemistry C, Том 124, № 29, 23.07.2020, стр. 16171–16176.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Konashuk, AS, Filatova, EO, Sakhonenkov, SS, Kolomiiets, NM & Afanas’ev, VV 2020, 'Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes', Journal of Physical Chemistry C, Том. 124, № 29, стр. 16171–16176. https://doi.org/10.1021/acs.jpcc.0c04183

APA

Konashuk, A. S., Filatova, E. O., Sakhonenkov, S. S., Kolomiiets, N. M., & Afanas’ev, V. V. (2020). Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes. Journal of Physical Chemistry C, 124(29), 16171–16176. https://doi.org/10.1021/acs.jpcc.0c04183

Vancouver

Konashuk AS, Filatova EO, Sakhonenkov SS, Kolomiiets NM, Afanas’ev VV. Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes. Journal of Physical Chemistry C. 2020 Июль 23;124(29):16171–16176. https://doi.org/10.1021/acs.jpcc.0c04183

Author

Konashuk, Aleksei S. ; Filatova, Elena O. ; Sakhonenkov, Sergei S. ; Kolomiiets, Nadiia M. ; Afanas’ev, Valeri V. / Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes. в: Journal of Physical Chemistry C. 2020 ; Том 124, № 29. стр. 16171–16176.

BibTeX

@article{8dcdbb0d974d483aafdad6c4fd4747b2,
title = "Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes",
abstract = "Physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the “normal” value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.",
keywords = "THIN-FILMS, XPS ANALYSIS, OXIDATION, TITANIUM, NITRIDE, VACANCY, ALD",
author = "Konashuk, {Aleksei S.} and Filatova, {Elena O.} and Sakhonenkov, {Sergei S.} and Kolomiiets, {Nadiia M.} and Afanas{\textquoteright}ev, {Valeri V.}",
note = "Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",
year = "2020",
month = jul,
day = "23",
doi = "10.1021/acs.jpcc.0c04183",
language = "English",
volume = "124",
pages = "16171–16176",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "29",

}

RIS

TY - JOUR

T1 - Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes

AU - Konashuk, Aleksei S.

AU - Filatova, Elena O.

AU - Sakhonenkov, Sergei S.

AU - Kolomiiets, Nadiia M.

AU - Afanas’ev, Valeri V.

N1 - Publisher Copyright: © 2020 American Chemical Society.

PY - 2020/7/23

Y1 - 2020/7/23

N2 - Physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the “normal” value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.

AB - Physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the “normal” value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.

KW - THIN-FILMS

KW - XPS ANALYSIS

KW - OXIDATION

KW - TITANIUM

KW - NITRIDE

KW - VACANCY

KW - ALD

UR - https://www.mendeley.com/catalogue/48eda307-f97e-3677-8b02-bf0271eac118/

UR - http://www.scopus.com/inward/record.url?scp=85089988184&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.0c04183

DO - 10.1021/acs.jpcc.0c04183

M3 - Article

VL - 124

SP - 16171

EP - 16176

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 29

ER -

ID: 61291497