Research output: Contribution to journal › Article › peer-review
Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes. / Konashuk, Aleksei S. ; Filatova, Elena O. ; Sakhonenkov, Sergei S. ; Kolomiiets, Nadiia M. ; Afanas’ev, Valeri V.
In: Journal of Physical Chemistry C, Vol. 124, No. 29, 23.07.2020, p. 16171–16176.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes
AU - Konashuk, Aleksei S.
AU - Filatova, Elena O.
AU - Sakhonenkov, Sergei S.
AU - Kolomiiets, Nadiia M.
AU - Afanas’ev, Valeri V.
N1 - Publisher Copyright: © 2020 American Chemical Society.
PY - 2020/7/23
Y1 - 2020/7/23
N2 - Physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the “normal” value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.
AB - Physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the “normal” value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.
KW - THIN-FILMS
KW - XPS ANALYSIS
KW - OXIDATION
KW - TITANIUM
KW - NITRIDE
KW - VACANCY
KW - ALD
UR - https://www.mendeley.com/catalogue/48eda307-f97e-3677-8b02-bf0271eac118/
UR - http://www.scopus.com/inward/record.url?scp=85089988184&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.0c04183
DO - 10.1021/acs.jpcc.0c04183
M3 - Article
VL - 124
SP - 16171
EP - 16176
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 29
ER -
ID: 61291497