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Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells. / Shugabaev, T.; Melnichenko, I.A.; Kuznetsov, A.; Lendyashova, V.V.; Bulkin, P.; Kirilenko, D.A.; Gagarina, A.Y.; Kharchenko, A.A.; Shtrom, I.V.; Kozodaev, D.A.; Kryzhanovskaya, N.V.; Reznik, R.R.; Bolshakov, A.D.; Cirlin, G.E.; Gridchin, V.O.

In: Nanoscale Horizons, Vol. 11, No. 5, 01.05.2026, p. 1312-1319.

Research output: Contribution to journal › Article › peer-review

Harvard

Shugabaev, T, Melnichenko, IA, Kuznetsov, A, Lendyashova, VV, Bulkin, P, Kirilenko, DA, Gagarina, AY, Kharchenko, AA, Shtrom, IV, Kozodaev, DA, Kryzhanovskaya, NV, Reznik, RR, Bolshakov, AD, Cirlin, GE & Gridchin, VO 2026, 'Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells', Nanoscale Horizons, vol. 11, no. 5, pp. 1312-1319. https://doi.org/10.1039/d5nh00787a

APA

Shugabaev, T., Melnichenko, I. A., Kuznetsov, A., Lendyashova, V. V., Bulkin, P., Kirilenko, D. A., Gagarina, A. Y., Kharchenko, A. A., Shtrom, I. V., Kozodaev, D. A., Kryzhanovskaya, N. V., Reznik, R. R., Bolshakov, A. D., Cirlin, G. E., & Gridchin, V. O. (2026). Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells. Nanoscale Horizons, 11(5), 1312-1319. https://doi.org/10.1039/d5nh00787a

Vancouver

Shugabaev T, Melnichenko IA, Kuznetsov A, Lendyashova VV, Bulkin P, Kirilenko DA et al. Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells. Nanoscale Horizons. 2026 May 1;11(5):1312-1319. https://doi.org/10.1039/d5nh00787a

Author

Shugabaev, T. ; Melnichenko, I.A. ; Kuznetsov, A. ; Lendyashova, V.V. ; Bulkin, P. ; Kirilenko, D.A. ; Gagarina, A.Y. ; Kharchenko, A.A. ; Shtrom, I.V. ; Kozodaev, D.A. ; Kryzhanovskaya, N.V. ; Reznik, R.R. ; Bolshakov, A.D. ; Cirlin, G.E. ; Gridchin, V.O. / Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells. In: Nanoscale Horizons. 2026 ; Vol. 11, No. 5. pp. 1312-1319.

BibTeX

@article{b774d4c8e98d4d1db8a34d4d7d54c24c,
title = "Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells",
abstract = "The combination of plasmonic systems and the high optical gain of InGaN is a promising approach for the fabrication of nanolasers and other nanoscale light sources. Here, we demonstrate, for the first time, the use of MBE-grown GaN nanowires with embedded InGaN quantum wells as the key components for plasmonic nanolasers. The utilization of quantum wells as the semiconductor gain medium, combined with the plasmonic AlOx/Ag system, shows an emission linewidth as narrow as 0.15 nm at 5 K. Modeling the dispersion of surface plasmon polaritons in the nanowires on an AlOx-coated Ag film reveals the formation of hybrid modes and shows an excellent spectral overlap with the InGaN QW emission, providing evidence for a strong exciton–plasmon interaction in the studied structure. This strong interaction yields an estimated average Purcell factor of 27, which is essential for realizing nanoscale high-speed optical components. This journal is {\textcopyright} The Royal Society of Chemistry, 2026",
author = "T. Shugabaev and I.A. Melnichenko and A. Kuznetsov and V.V. Lendyashova and P. Bulkin and D.A. Kirilenko and A.Y. Gagarina and A.A. Kharchenko and I.V. Shtrom and D.A. Kozodaev and N.V. Kryzhanovskaya and R.R. Reznik and A.D. Bolshakov and G.E. Cirlin and V.O. Gridchin",
note = "Export Date: 29 March 2026; Cited By: 0; Correspondence Address: V.O. Gridchin; Alferov University, St. Petersburg, 194021, Russian Federation; email: gridchin@spbau.ru",
year = "2026",
month = may,
day = "1",
doi = "10.1039/d5nh00787a",
language = "Английский",
volume = "11",
pages = "1312--1319",
journal = "Nanoscale Horizons",
issn = "2055-6756",
publisher = "Royal Society of Chemistry",
number = "5",

}

RIS

TY - JOUR

T1 - Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells

AU - Shugabaev, T.

AU - Melnichenko, I.A.

AU - Kuznetsov, A.

AU - Lendyashova, V.V.

AU - Bulkin, P.

AU - Kirilenko, D.A.

AU - Gagarina, A.Y.

AU - Kharchenko, A.A.

AU - Shtrom, I.V.

AU - Kozodaev, D.A.

AU - Kryzhanovskaya, N.V.

AU - Reznik, R.R.

AU - Bolshakov, A.D.

AU - Cirlin, G.E.

AU - Gridchin, V.O.

N1 - Export Date: 29 March 2026; Cited By: 0; Correspondence Address: V.O. Gridchin; Alferov University, St. Petersburg, 194021, Russian Federation; email: gridchin@spbau.ru

PY - 2026/5/1

Y1 - 2026/5/1

N2 - The combination of plasmonic systems and the high optical gain of InGaN is a promising approach for the fabrication of nanolasers and other nanoscale light sources. Here, we demonstrate, for the first time, the use of MBE-grown GaN nanowires with embedded InGaN quantum wells as the key components for plasmonic nanolasers. The utilization of quantum wells as the semiconductor gain medium, combined with the plasmonic AlOx/Ag system, shows an emission linewidth as narrow as 0.15 nm at 5 K. Modeling the dispersion of surface plasmon polaritons in the nanowires on an AlOx-coated Ag film reveals the formation of hybrid modes and shows an excellent spectral overlap with the InGaN QW emission, providing evidence for a strong exciton–plasmon interaction in the studied structure. This strong interaction yields an estimated average Purcell factor of 27, which is essential for realizing nanoscale high-speed optical components. This journal is © The Royal Society of Chemistry, 2026

AB - The combination of plasmonic systems and the high optical gain of InGaN is a promising approach for the fabrication of nanolasers and other nanoscale light sources. Here, we demonstrate, for the first time, the use of MBE-grown GaN nanowires with embedded InGaN quantum wells as the key components for plasmonic nanolasers. The utilization of quantum wells as the semiconductor gain medium, combined with the plasmonic AlOx/Ag system, shows an emission linewidth as narrow as 0.15 nm at 5 K. Modeling the dispersion of surface plasmon polaritons in the nanowires on an AlOx-coated Ag film reveals the formation of hybrid modes and shows an excellent spectral overlap with the InGaN QW emission, providing evidence for a strong exciton–plasmon interaction in the studied structure. This strong interaction yields an estimated average Purcell factor of 27, which is essential for realizing nanoscale high-speed optical components. This journal is © The Royal Society of Chemistry, 2026

UR - https://www.mendeley.com/catalogue/61b4191b-23d6-380d-ae67-f3498d7a2a2f/

U2 - 10.1039/d5nh00787a

DO - 10.1039/d5nh00787a

M3 - статья

VL - 11

SP - 1312

EP - 1319

JO - Nanoscale Horizons

JF - Nanoscale Horizons

SN - 2055-6756

IS - 5

ER -

ID: 151899629